INFINEON BC817UPN

BC817UPN
NPN/PNP Silicon Transistor Array
For AF input stages and driver applications
5
4
6
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
3
2
Transistors in one package
1
Tape loading orientation
VPW09197
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Top View
6 5 4
B2
E2
6
5
4
TR2
W1s
TR1
Position in tape: pin 1
opposite of feed hole side
1 2 3
Direction of Unreeling
Type
BC817UPN
C1
SC74_Tape
Marking
1Bs
1
2
3
E1
B1
C2
EHA07177
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
45
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
5
DC collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 115 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
500
1
Unit
V
mA
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
105
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Aug-21-2002
BC817UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)CEO
45
-
-
V(BR)CBO
50
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
50
µA
IEBO
-
-
100
nA
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
-
hFE
DC current gain 1)
IC = 100 mA, VCE = 1 V
160
250
400
IC = 300 mA, VCE = 1 V
100
-
-
Collector-emitter saturation voltage1)
VCEsat
-
-
0.7
V
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
VBEsat
-
-
1.2
fT
-
170
-
MHz
Ccb
-
6
-
pF
Ceb
-
60
-
IC = 500 mA, IB = 50 mA
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2%
2
Aug-21-2002
BC817UPN
Collector cutoff current ICBO = f (TA )
Total power dissipation Ptot = f (TS )
VCB = 25V
400
10 5
mW
Ι CBO
BC 817/818
EHP00221
nA
10 4
Ptot
300
250
max
10 3
200
typ
10 2
150
100
10 1
50
0
0
20
40
60
80
120 °C
100
10 0
150
0
50
100
TS
150
˚C
TA
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
10 3
2
RthJS
10
Ptotmax / PtotDC
K/W
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Aug-21-2002
BC817UPN
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC = f (VCEsat ), hFE = 10
IC = f (VBEsat ), hFE = 10
10 3
ΙC
BC 817/818
EHP00223
mA
ΙC
150 ˚C
25 ˚C
-50 ˚C
10 2
10 1
10 1
5
5
10 0
10 0
5
5
0.2
150 ˚C
25 ˚C
-50 ˚C
10 2
5
0
EHP00222
mA
5
10 -1
BC 817/818
10 3
0.4
0.6
V
10 -1
0.8
0
1.0
2.0
3.0
DC current gain hFE = f (IC )
Transition frequency fT = f (IC)
VCE = 5V
VCE = 5V
h FE 5
BC 817/818
4.0
V BEsat
VCEsat
10 3
V
EHP00224
10 3
fT
100 ˚C
25 ˚C
BC 817/818
EHP00218
MHz
5
-50 ˚C
10
2
5
10 2
5
10 1
5
10 0
10 -1
10
0
10
1
10
2
mA 10
10 1
10 0
3
10 1
10 2
mA
10 3
ΙC
ΙC
4
Aug-21-2002