BSO130P03S OptiMOS®-P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS(on),max 13 mΩ ID -11.3 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter Type Package Ordering Code Marking BSO130P03S P-DSO-8 Q67042-S4233 130P3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Value Symbol Conditions ID ≤10 secs steady state T A=25 °C1) -11.3 -9.2 T A=70 °C1) -9.1 -7.4 Pulsed drain current I D,pulse T A=25 °C2) -45 Avalanche energy, single pulse E AS I D=11.3 A, R GS=25 Ω 148 Reverse diode dv /dt dv /dt I D=11.3 A, V DS=20 V, di /dt =-200 A/µs, T j,max=150 °C -6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C1) 2.36 A mJ kV/µs ±25 V 1.56 -55 ... 150 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.0 Unit page 1 2004-01-21 BSO130P03S Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 53 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-140 µA -1 -1.5 -2.2 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-30 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-11.3 A - 9.9 13.0 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-9.5 A 14 27 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2004-01-21 BSO130P03S Parameter Values Symbol Conditions Unit min. typ. max. - 2650 3520 - 708 942 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 580 870 Turn-on delay time t d(on) - 13 20 Rise time tr - 16 24 Turn-off delay time t d(off) - 70 105 Fall time tf - 62 93 Gate to source charge Q gs - -7 -9 Gate charge at threshold Q g(th) - -3.7 -5.0 Gate to drain charge Q gd - -21 -32 Switching charge Q sw - -25 -36 Gate charge total Qg - -61 -81 Gate plateau voltage V plateau - -2.6 - Output charge Q oss - -22 -29 - - -2.1 - - -45 V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω pF ns Gate Charge Characteristics3) V DD=-24 V, I D=11.3 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-11.3 A, T j=25 °C - -0.84 -1.2 V Reverse recovery time t rr V R=15 V, I F=-11.3A, di F/dt =100 A/µs - 26 33 ns Reverse recovery charge Q rr - 16 20 nC 2) 3) T A=25 °C A See figure 3 See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2004-01-21 BSO130P03S 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); |V GS|≥10 V; t p≤10 s 3 12 2.5 10 2 8 -I D [A] P tot [W] 1 Power dissipation 1.5 6 1 4 0.5 2 0 0 0 40 80 120 160 0 40 80 T A [°C] 160 T A [°C] 3 Safe operation area 4 Max. transient thermal impedance 1) I D=f(V DS); T A=25 °C ; D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 120 102 100 100 10 µs 1 µs 100 µs 101 1 ms 10 101 0.2 10 0.1 10 ms Z thJS [K/W] -I D [A] limited by on-state resistance 100 0.5 1 0.05 100 1 0.02 0.01 10-1 10-1 0.1 0.1 DC 10-2 10-2 0.01 0.1 1 -1 10 Rev. 1.0 single pulse 10 0 10 100 1 -V DS [V] 10 2 10 page 4 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] 2004-01-21 BSO130P03S 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 45 -10 V -2.5 V -3.5 V -4.5 V 40 -2.7 V -3.2 V -3 V 35 35 30 -3.2 V R DS(on) [mΩ] -I D [A] 30 25 -3 V 20 25 -3.5 V 20 15 -4.5 V 10 -10 V 15 -2.7 V 10 -2.5 V 5 5 -2.3 V 0 0 0 1 2 0 3 10 20 -V DS [V] 30 40 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 40 40 g fs [S] -I D [A] 30 20 20 10 150 °C 25 °C 0 0 0 1 2 3 4 10 20 30 -I D [A] -V GS [V] Rev. 1.0 0 page 5 2004-01-21 BSO130P03S 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-140 µA 20 2.5 2 12 1.5 -V GS(th) [V] R DS(on) [mΩ] 98 % 16 typ. 8 4 max. typ. min. 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 10000 25 °C, typ 150 °C, typ 103 10 Coss 1000 25 °C, 98% I F [A] C [pF] Ciss 150 °C, 98% Crss 1 102 0.1 100 0 10 20 30 0.5 1 1.5 -V SD [V] -V DS [V] Rev. 1.0 0 page 6 2004-01-21 BSO130P03S 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-5.5 A pulsed parameter: T j(start) parameter: V DD 100 12 -6 V 10 -15 V 8 -V GS [V] -I AV [A] -24 V 25 °C 10 6 100 °C 4 125 °C 2 1 0 1 10 100 1000 0 20 40 60 -Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 36 V GS 34 Qg -V BR(DSS) [V] 32 30 28 V g s(th) 26 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.0 page 7 2004-01-21 BSO130P03S Package Outline P-DSO-8: Outline Footprint Packaging Tape Tube Dimensions in mm Rev. 1.0 page 8 2004-01-21 BSO130P03S Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2004-01-21