SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery IF 12 A PG-TO220-2-2. • No temperature influence on the switching behavior • No forward recovery Type SDT12S60 Package PG-TO220-2-2. Ordering Code Q67040-S4470 Marking Pin 1 Pin 2 D12S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF 12 RMS forward current, f=50Hz IFRMS 17 Surge non repetitive forward current, sine halfwave IFSM Value Unit A 36 TC=25°C, tp=10ms IFRM 49 IFMAX 120 i 2t value, TC=25°C, tp=10ms ∫i2dt 6.48 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 88.2 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev. 2.3 Page 1 2008-06-03 SDT12S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=12A, Tj=25°C - 1.5 1.7 IF=12A, Tj=150°C - 1.7 2.1 Reverse current µA IR V R=600V, T j=25°C - 40 400 V R=600V, T j=150°C - 100 2000 Rev. 2.3 Page 2 2008-06-03 SDT12S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 30 - nC trr - n.a. - ns AC Characteristics Total capacitive charge V R=400V, IF=12A, diF /dt=200A/µs, Tj=150°C Switching time V R=400V, IF=12A, diF /dt=200A/µs, Tj=150°C Total capacitance C pF V R=1V, T C=25°C, f=1MHz - 450 - V R=300V, T C=25°C, f=1MHz - 45 - V R=600V, T C=25°C, f=1MHz - 43 - Rev. 2.3 Page 3 2008-06-03 SDT12S60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f (TC) parameter: Tj≤175 °C 90 24 A W 20 18 60 16 IF Ptot 70 50 14 12 40 10 30 8 6 20 4 10 2 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 24 180 44 W d=0.1 d=0.2 36 d=0.5 d=1 A PF(AV) IF 16 150°C 125°C 100°C 25°C -40°C 32 28 24 12 20 16 8 12 8 4 4 0 0 0.5 1 1.5 2.5 V VF Rev. 2.3 Page 4 0 0 2 4 6 8 10 12 16 A IF(AV) 2008-06-03 SDT12S60 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 2 10 10 1 µA SDT12S60 K/W 150°C 10 1 125°C 10 0 ZthJC IR 100°C 25°C 10 0 10 -1 D = 0.50 10 -1 10 -2 0.20 0.10 0.05 10 -2 10 10 -3 100 150 200 250 300 350 400 450 500 V VR -3 10 -4 -7 10 600 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 9 600 pF µJ 500 7 450 EC C 400 350 6 5 300 4 250 3 200 150 2 100 1 50 0 0 10 Rev. 2.3 10 1 10 2 V VR 10 3 0 0 100 200 300 400 600 V VR Page 5 2008-06-03 SDT12S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 40 nC IF *2 IF 32 Qc 28 IF *0.5 24 20 16 12 8 4 0 100 200 300 400 500 600 700 800A/µs 1000 diF/dt Rev. 2.3 Page 6 2008-06-03 SDT12S60 PG-TO-220-2-2 Rev. 2.3 Page 7 2008-06-03 SDT12S60 Rev. 2.3 Page 8 2008-06-03