BC807 16LT1 D

BC807-16L, BC807-25L,
BC807-40L
General Purpose
Transistors
PNP Silicon
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Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−45
V
Collector − Base Voltage
VCBO
−50
V
Emitter − Base Voltage
VEBO
−5.0
V
IC
−500
mAdc
Collector Current − Continuous
3
1
2
Max
Unit
SOT−23
CASE 318
STYLE 6
225
1.8
mW
mW/°C
MARKING DIAGRAM
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
5xx M G
G
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
1
5xx = Device Code
xx = A1, B1, or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 12
1
Publication Order Number:
BC807−16LT1/D
BC807−16L, BC807−25L, BC807−40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−50
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
−
−
−
−
−100
−5.0
nA
mA
100
160
250
40
−
−
−
−
250
400
600
−
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
(IC = −500 mA, VCE = −1.0 V)
−
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−
−
−0.7
V
Base −Emitter On Voltage
(IC = −500 mA, VCE = −1.0 V)
VBE(on)
−
−
−1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping†
BC807−16LT1G
SBC807−16LT1G*
5A1
3000 / Tape & Reel
5A1
10,000 / Tape & Reel
BC807−16LT3G
SBC807−25LT1G*
BC807−25LT1G
SBC807−25LT1G*
5B1
3000 / Tape & Reel
SOT−23
(Pb−Free)
BC807−25LT3G
SBC807−25LT3G*
5B1
10,000 / Tape & Reel
5C
3000 / Tape & Reel
5C
10,000 / Tape & Reel
BC807−40LT1G
SBC807−40LT1G*
BC807−40LT3G
SBC807−40LT3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1
500
1
400
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 1 V
150°C
300
25°C
200
−55°C
100
0
150°C
25°C
−55°C
0.1
0.01
0.001
0.01
1
0.1
0.001
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
0.01
IC, COLLECTOR CURRENT (A)
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
1
BC807−16L, BC807−25L, BC807−40L
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC807−16LT1
-1.0
TJ = 25°C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 5. Saturation Region
0
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1.0
-0.1
-1000
Figure 6. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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4
-100
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−25LT1
500
1
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
150°C
25°C
−55°C
0.1
0.01
0.001
0.01
1
0.1
0.001
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
0.01
IC, COLLECTOR CURRENT (A)
1.1
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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5
1000
1
BC807−16L, BC807−25L, BC807−40L
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC807−25LT1
-1.0
TJ = 25°C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 13. Saturation Region
0
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1.0
-0.1
-1000
Figure 14. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitances
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6
-100
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−40LT1
1000
1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
900
150°C
800
700
600
500
25°C
400
300
−55°C
200
100
0
150°C
25°C
−55°C
0.1
0.01
0.001
0.01
1
0.1
0.001
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
0.01
IC, COLLECTOR CURRENT (A)
1.1
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
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7
1000
1
BC807−16L, BC807−25L, BC807−40L
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC807−40LT1
-1.0
TJ = 25°C
-0.8
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
-100
100
+1.0
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 21. Saturation Region
0
-1.0
-2.0
-1.0
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1.0
-0.1
-1000
Figure 22. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 23. Capacitances
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8
-100
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1
IC, COLLECTOR CURRENT (A)
1
1 mS
1S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 24. Safe Operating Area
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9
100
BC807−16L, BC807−25L, BC807−40L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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For additional information, please contact your local
Sales Representative
BC807−16LT1/D
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