INFINEON SPD06N60C3

SPD06N60C3
CoolMOS
TM
Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Ultra low gate charge
V DS @ T j,max
650
V
R DS(on),max
0.75
Ω
ID
6.2
A
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
PG-TO252
• Extreme dv /dt rated
• Improved transconductance
Type
Package
Ordering Code
Marking
SPD06N60C3
PG-TO252
Q67040-S4630
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
6.2
T C=100 °C
3.9
Pulsed drain current1)
I D,pulse
T C=25 °C
18.6
Avalanche energy, single pulse
E AS
I D=3.1 A, V DD=50 V
200
Avalanche energy, repetitive t AR1),2)
E AR
I D=6.2 A, V DD=50 V
0.5
Avalanche current, repetitive t AR1)
I AR
Drain source voltage slope
dv /dt
Gate source voltage
Unit
A
mJ
6.2
A
I D=6.2 A, V DS=480 V,
T j=125 °C
50
V/ns
V GS
static
±20
V
V GS
AC (f >1 Hz)
±30
Power dissipation
P tot
T C=25 °C
74
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
Reverse diode dv/dt 7)
dv/dt
15
Rev. 1.5
Page 1
V/ns
2008-04-11
SPD06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.7
SMD version, device
on PCB, minimal
footprint
-
-
75
SMD version, device
on PCB, 6 cm2 cooling
area3)
-
50
-
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
-
700
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature *)
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=6.2 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.26 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
-
100
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=3.9 A,
T j=25 °C
-
0.68
0.75
Ω
V GS=10 V, I D=3.9 A,
T j=150 °C
-
1.82
-
Gate resistance
RG
f =1 MHz, open drain
-
1
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.9 A
-
5.6
-
S
*) reflow soldering, MSL3
Rev. 1.5
Page 2
2008-04-11
SPDT06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
620
-
-
200
-
-
17
-
-
28
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Effective output capacitance, energy
C o(er)
related4)
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related5)
C o(tr)
-
47
-
Turn-on delay time
t d(on)
-
7
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
52
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
3.3
-
Gate to drain charge
Q gd
-
12
-
Gate charge total
Qg
-
24
31
Gate plateau voltage
V plateau
-
5.5
-
V DD=480 V,
V GS=10 V, I D=6.2 A,
R G=12 Ω
ns
Gate Charge Characteristics
V DD=480 V, I D=6.2 A,
V GS=0 to 10 V
1)
Pulse width limited by maximum temperature T j,max only
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
nC
V
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
7)
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 1.5
Page 3
2008-04-11
SPD06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
6.2
-
-
18.6
-
0.97
1.2
V
-
400
-
ns
-
3.5
-
µC
-
25
-
A
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
T C=25 °C
V GS=0 V, I F=6.2 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
typ.
R th1
0.0325
R th2
Value
Unit
typ.
K/W
C th1
0.0000502
0.0448
C th2
0.000303
R th3
0.251
C th3
0.000428
R th4
0.31
C th4
0.00243
R th5
0.231
C th5
0.00344
C th6
0.1986)
Ws/K
6)
C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.
Rev. 1.5
Page 4
2008-04-11
SPD06N60C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
80
102
limited by on-state
resistance
1 µs
60
1
10
10 µs
I D [A]
P tot [W]
100 µs
40
100
DC
1 ms
10 ms
20
10-1
0
10-2
0
40
80
120
160
100
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
20
20 V
7V
16
100
6.5 V
0.5
6V
I D [A]
Z thJC [K/W]
12
0.2
0.1
8
-1
10
5.5 V
0.05
0.02
0.01
single pulse
5V
4
4.5 V
4V
10-2
10-6
0
10-5
10-4
10-3
10-2
10-1
100
5
10
15
20
V DS [V]
t p [s]
Rev. 1.5
0
Page 5
2008-04-11
SPD06N60C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
8
4
6V
20 V
4V
5.5 V
7V
4.5 V
5.5 V
5V
6.5 V
6
3
R DS(on) [Ω]
I D [A]
5V
4
6V
20 V
2
4.5 V
2
1
4V
0
0
0
5
10
15
20
0
2
4
V DS [V]
6
8
10
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=3.9 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
2
25
1.6
20
1.2
15
I D [A]
R DS(on) [Ω]
25 °C
98 %
0.8
10
typ
150 °C
0.4
5
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.5
0
2
4
6
8
10
V GS [V]
Page 6
2008-04-11
SPD06N60C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=6.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
12
10
25 °C
120 V
25 °C, 98%
480 V
150 °C, 98%
101
8
I F [A]
V GS [V]
150 °C
6
100
4
2
10-1
0
0
10
20
0
30
0.5
Q gate [nC]
1
1.5
2
2.5
V SD [V]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
E AS=f(T j); I D=3.1 A; V DD=50 V
parameter: T j(start)
250
8
200
6
E AS [mJ]
I AV [A]
150
4
125 °C
100
25 °C
2
50
0
0
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
60
100
140
180
T j [°C]
t AR [µs]
Rev. 1.5
20
Page 7
2008-04-11
SPD06N60C3
14 Typ. capacitances
V BR(DSS)=f(T j); I D=0.25 mA
C =f(V DS); V GS=0 V; f =1 MHz
700
104
660
103
C [pF]
V BR(DSS) [V]
13 Drain-source breakdown voltage
620
Ciss
102
Coss
580
101
540
100
-60
-20
20
60
100
140
180
T j [°C]
Crss
0
100
200
300
400
500
V DS [V]
15 Typ. C oss stored energy
E oss= f(V DS)
5
4
E oss [µJ]
3
2
1
0
0
100
200
300
400
500
600
V DS [V]
Rev. 1.5
Page 8
2008-04-11
SPD06N60C3
Definition of diode switching characteristics
Rev. 1.5
Page 9
2008-04-11
SPD06N60C3
PG-TO252-3-1: Outline , PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK)
Rev. 1.5
Page 10
2008-04-11
SPD06N60C3
Rev. 1.5
Page 11
2008-04-11