Preliminary Data BSO 305N SIPMOS Small-Signal-Transistor Features Product Summary • Dual N Channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.035 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 6 A • Logic Level • dv/dt rated Type Package Ordering Code BSO 305 N SO 8 Q67041-S4028 Maximum Ratings, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current, one channel active ID 6 T C = 25 ˚C, T A = 25 ˚C Pulsed drain current, one channel active IDpulse 24 EAS 100 Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 6 EAR 0.2 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W ˚C Value Unit A T C = 25 ˚C Avalanche energy, single pulse mJ I D = 6 A, VDD = 25 V, R GS = 25 Ω A mJ kV/µs I S = 6 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C T C = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSO 305N Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 35 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 90 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS I D = 30 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA, T j = 25 ˚C µA VDS = 30 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 30 V, V GS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 5 A - 0.033 0.05 VGS = 10 V, I D = 6 A - 0.023 0.035 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 305N Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs 6 12 - S Ciss - 650 815 pF Coss - 300 375 Crss - 160 200 td(on) - 16 24 ns tr - 50 75 ns td(off) - 15 23 tf - 22 33 Characteristics Transconductance VDS≤2*I D*RDS(on)max , ID = 6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1 Ω Rise time VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1 Ω Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1 Ω Fall time ns VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1 Ω Data Sheet 3 05.99 BSO 305N Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. QG(th) - 0.9 1.4 Gate charge at Vgs=5V VDD = 24 V, ID = 6 A , VGS = 0 to 5 V Qg(5) - 16 24 Gate charge total Qg - 25 38 V(plateau) - 3.2 IS - - 6 I SM - - 24 VSD - 1.3 1.7 V t rr - 45 70 ns Q rr - 45 70 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 24 V, ID = 0.1 A, VGS = 0 to 1 V nC VDD = 24 V, ID = 6 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 24 V, ID = 6 A Reverse Diode Inverse diode continuous forward current A TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 12 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 305N Power dissipation Drain current Ptot= f (TA) ID = f (TA ) BSO 305 N BSO 305 N 6.5 2.6 A W 5.5 2.2 5.0 2.0 4.5 ID Ptot 1.8 1.6 4.0 3.5 1.4 1.2 3.0 1.0 2.5 2.0 0.8 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0 20 40 60 80 100 ˚C 120 0.0 0 160 20 40 60 80 100 120 ˚C TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f(tp ) parameter : D = 0 , TA = 25 ˚C parameter : D= tp/T 10 160 2 BSO 305 N 10 2 BSO 305 N /ID S A = o S( VD tp = 3.9µs n) RD K/W 10 µs 10 1 Z thJA ID 100 µs 1 ms 10 10 1 0 D = 0.50 10 ms 0.20 10 0 0.10 single pulse 10 -1 0.02 DC 10 -2 -1 10 10 0 10 1 0.01 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Data Sheet 0.05 s 10 4 tp 5 05.99 BSO 305N Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 5 A, VGS = 4.5 V BSO 305 N BSO 305 N 0.13 Ptot = 2W Ω l kjihgf b 3.0 c 3.5 d 4.0 9 d e 4.5 8 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 11 10 ID 0.11 VGS [V] a 2.5 e 12 7 6 c 5 4 3 0.10 RDS(on) 15 A 0.09 0.08 0.07 98% 0.06 0.05 typ 0.04 0.03 b 0.02 2 0.01 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 -60 5.0 VDS -20 20 60 100 140 ˚C 200 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 C pF 10 3 Cis Co Crs 10 2 0 5 10 15 20 V 30 VDS Data Sheet 6 05.99 BSO 305N Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 30 µA 12 3.0 V A VGS(th) 2.4 ID 8 2.2 2.0 1.8 1.6 6 1.4 1.2 4 max 1.0 0.8 typ 0.6 2 0.4 min 0.2 0 0 1 2 V 3 0.0 -60 5 VGS -20 20 60 100 V 160 Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 305 N A IF 10 1 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 305N Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 6 A, VDD = 25 V RGS = 25 Ω VGS = f (Q Gate) parameter: ID puls = 6 A BSO 305 N 100 16 mJ V 80 12 VGS EAS 70 60 50 10 8 40 0,2 VDS max 6 0,8 VDS max 30 4 20 2 10 0 20 40 60 80 100 ˚C 120 Drain-source breakdown voltage 0 0 160 Tj 4 8 12 16 20 24 28 nC 36 Q Gate V(BR)DSS = f (Tj) BSO 305 N 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99