BB669/BB689... Silicon Tuning Diode For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB669 BB689 BB689-02V 1 2 Type BB669 BB689 BB689-02V Package SOD323 SCD80 SC79 Configuration single single Single LS(nH) 1.8 0.6 0.6 Marking 1 EE E Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit V ( R 5k ) 1 Mar-27-2003 BB669/BB689... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 51 56.5 61.5 VR = 2 V, f = 1 MHz 39.6 43.4 47.2 VR = 25 V, f = 1 MHz 2.6 2.8 3 VR = 28 V, f = 1 MHz 2.5 2.7 2.9 CT1 /CT28 18 20.9 23.2 CT2 /CT25 14.5 15.5 17 CT/CT - - 2 % rS - 0.85 - Capacitance ratio - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz 1For details please refer to Application Note 047 2 Mar-27-2003 BB669/BB689... Diode capacitance CT = (VR ) Temperature coefficient of the diode capacitance TCc = (VR ) f = 1MHz 10 -3 60 pF 50 1/°C TC C CT 45 40 35 10 -4 30 25 20 15 10 5 0 0 4 8 12 16 20 24 V 10 -5 0 10 30 VR Reverse current I R = 10 1 V 10 2 VR (V R) T A = Parameter 3 10 85°C pA 2 IR 10 25°C 10 1 10 0 10 -1 10 0 10 1 V 10 2 VR 3 Mar-27-2003