BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Package
RON
Vbb(on)
IL(NOM)
IL(SCr)
38mΩ
4.75...41V
9.8A
40A
TO 220-5-11
TO-263-5-2
Standard
SMD
TO-220-5-12
Straight
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Block Diagram
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Diagnostic Function
•
•
•
IN
ST
Logic
with
protection
functions
PROFET
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state
Semiconductor Group
Vbb
OUT
Load
GND
Page 1 of 12
2003-Oct-01
BTS436L2
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
temperature
sensor
IN
ESD
LOAD
Open load
detection
ST
GND
PROFET
Pin configuration
Pin Definitions and Functions
(top view)
Pin
Symbol
Function
1
GND
Logic ground
2
IN
Input, activates the power switch in
case of logical high signal
3
Vbb
Positive power supply voltage
The tab is shorted to pin 3
4
ST
Diagnostic feedback, low on failure
Tab = VBB
1
2
GND IN
5
OUT
Output to the load
Tab
Vbb
Positive power supply voltage
The tab is shorted to pin 3
Semiconductor Group
Page 2
(3)
4
5
ST OUT
2003-Oct-01
BTS436L2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load
dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
2)
RI = 2 Ω, RL= 4.0 Ω, td= 200 ms, IN= low or high
Load current (Current limit, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
4
(See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 Ω, E )AS=0.33J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
Symbol
Vbb
Vbb
3
VLoad dump
IL
Tj
Tstg
Ptot
ZL
VESD
Values
43
24
Unit
V
V
60
V
self-limited
-40 ...+150
-55 ...+150
75
A
°C
5.0
1.0
4.0
8.0
mH
kV
-10 ... +16
±2.0
±5.0
V
mA
Values
typ
max
-- 1.75
-75
33
--
Unit
W
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 7
Thermal Characteristics
Parameter and Conditions
Thermal resistance
1)
2)
3)
4)
5)
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
device on pcb5):
min
----
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch-off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
Page 3
2003-Oct-01
BTS436L2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A; VBB ≥ 7V
see diagram, page 9
Tj=25 °C: RON
--
35
64
38
72
mΩ
8.8
9.8
--
A
--
--
2
mA
50
50
100
120
200
250
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
4.75
41
43
-52
8
25
10
V
41
43
----
---47
5
-1
--
0.8
1.4
Tj=150 °C:
Nominal load current, (pin 3 to 5)
IL(ISO)
ISO 10483-1, 6.7:VON=0.5V, TC=85°C
Output current (pin 5) while GND disconnected or
GND pulled up6), Vbb=30 V, VIN= 0,
IL(GNDhigh)
see diagram page 7
Turn-on time
IN
Turn-off time
IN
RL = 12 Ω,
Slew rate on
10 to 30% VOUT, RL = 12 Ω,
Slew rate off
70 to 40% VOUT, RL = 12 Ω,
to 90% VOUT: ton
to 10% VOUT: toff
Operating Parameters
Operating voltage
Tj =-40 Vbb(on)
Tj =+25...+150°C:
Overvoltage protection7)
Tj =-40°C: Vbb(AZ)
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3) 8)
Tj=-40...+25°C: Ibb(off)
VIN=0; see diagram on page 9
Tj= 150°C:
IL(off)
Off-State output current (included in Ibb(off))
VIN=0
Operating current 9), VIN=5 V
IGND
6)
7)
8)
9)
V
µA
µA
mA
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 7.
Measured with load
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 4
2003-Oct-01
BTS436L2
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Protection Functions10)
Current limit (pin 3 to 5)
Values
min
typ
max
Unit
IL(lim)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 11)
Thermal shutdown time11)
Tj,start = 25°C: toff(SC)
46
39
30
58
51
38
68
58
46
A
---
40
1.9
---
A
ms
41
43
150
---
47
-10
--
52
--32
V
°C
K
V
--
600
--
mV
IL (OL)
100
--
900
mA
RI
2.5
3.5
6
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
td(ST OL4)
1.7
1.5
-1
20
100
--0.5
-50
520
3.2
--50
90
900
V
V
V
µA
µA
µs
IST = +1.6 mA: VST(high)
IST = +1.6 mA: VST(low)
5.4
--
6.1
--
-0.4
V
(see timing diagrams on page 11)
(see timing diagrams on page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 12)
Reverse battery voltage drop (Vout > Vbb)13 )
IL = -2 A
Tj=150 °C:
Diagnostic Characteristics
Open load detection current
(on-condition)
Input and Status Feedback14)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Delay time for status with open load after switch off
(see timing diagrams on page 11)
Status output (open drain)
Zener limit voltage
ST low voltage
10)
11)
12)
13)
14)
VON(CL)
Tjt
∆Tjt
-Vbb
-VON(rev)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
not subject to production test, specified by design
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
2003-Oct-01
BTS436L2
Truth Table
Normal
operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level
Input
Output
Status
level
L
H
L
H
L
H
level
L
H
Z
H
L
L
BTS 436L2
H
H
H
L
H
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11)
Semiconductor Group
Page 6
2003-Oct-01
BTS436L2
Overvolt. and reverse batt. protection
Terms
+ 5V
+ Vbb
Ibb
2
IN
IL
V
IN
OUT
PROFET
4
V ST
IN
VON
R
Z2
Logic
R ST ST
GND
1
RI
5
ST
bb
V
Vbb
I ST
V
R ST
3
I IN
OUT
V
IGND
V OUT
PROFET
Z1
GND
GND
R GND
Signal GND
R
I
ESD-ZD I
I
Load GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Input circuit (ESD protection)
IN
R Load
Open-load detection in on-state
Open load, if VON < RON·IL(OL); IN high
I
GND
+ V bb
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
Status output
VON
ON
+5V
R ST(ON)
OUT
Logic
unit
ST
GND
Open load
detection
ESDZD
GND disconnect
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
3
Inductive and overvoltage output clamp
2
IN
PROFET
+ V bb
V
Z
4
VON
OUT
GND
PROFET
Vbb
V
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
VON clamped to 47 V typ.
Semiconductor Group
Page 7
2003-Oct-01
BTS436L2
Inductive Load switch-off energy
dissipation
GND disconnect with GND pull up
E bb
3
2
E AS
Vbb
IN
PROFET
4
OUT
IN
5
ST
V
bb
OUT
PROFET
GND
=
1
V
ELoad
Vbb
ST
GND
V
IN ST
V
GND
ZL
{
L
RL
EL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
2
Vbb
IN
PROFET
4
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
high
Energy stored in load inductance:
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
OUT
with an approximate solution for RL > 0 Ω:
5
IL· L
IL·RL
)
EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V
L
OUT(CL)|
ST
GND
1
V
Maximum allowable load inductance for
a single switch off
bb
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
ZL [mH]
1000
100
10
1
0.1
0
2
4
6
10
12
14
16
18
IL [A]
Semiconductor Group
Page 8
2003-Oct-01
BTS436L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mΩ]
80
70
Tj = 150°C
60
50
40
25°C
30
-40°C
20
10
3
5
7
9
30
40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
45
40
35
30
25
20
15
10
5
0
-50
0
50
Semiconductor Group
100
150
200
Tj [°C]
Page 9
2003-Oct-01
BTS436L2
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
V bb
ST
V
OUT
V
ST open drain
I
t
OUT
L
t
proper turn on under all conditions
The initial peak current should be limited by the lamp and not by the
current limit of the device.
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
Figure 2c: Switching an inductive load
IN
IN
VOUT
ST
90%
t on
dV/dton
10%
dV/dtoff
t
V
off
OUT
IL
I
t
L
I L(OL)
t
*) if the time constant of load is too large, open-load-status may
occur
Semiconductor Group
Page 10
2003-Oct-01
BTS436L2
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
I
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
other channel: normal operation
IN
t
d(ST OL)
ST
L
I
ST
d(ST OL)
L(lim)
I
t
t
VOUT
L(SCr)
off(SC)
I
normal
L
open
normal
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions
td(ST OL) = 10 µs typ.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 5b: Open load: turn on/off to open load
IN
IN
ST
ST
I
V
OUT
t
d(STOL4)
L
t
T
J
t
Semiconductor Group
Page 11
2003-Oct-01
BTS436L2
Package and Ordering Code
Straight: P-TO220-5-12
All dimensions in mm
Standard (=staggered): P-TO220-5-11
Sales code
BTS436L2
Ordering code:
Q67060-S6111-A2
10 ±0.2
Sales code
BTS436L2 S
Ordering code:
Q67060-S6111-A4
10 ±0.2
A
9.8 ±0.15
8.5 1)
3.7-0.15
0.25
M
A C
4.4
SMD: P-TO263-5-2
Ordering code:
T&R
Q67060-S6111-A3
10 ±0.2
4.4
9.8 ±0.15
1.27 ±0.1
B
0.1
A
0.05
2.4
0.5 ±0.1
4x1.7
8˚ max.
0.25
M
A B
Typical
All metal surfaces tin plated, except area of cut.
Semiconductor Group
11±0.5
9.25 ±0.2
13 ±0.5
M
A B C
Typical
All metal surfaces tin plated, except area of cut.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
0...0.15
5x0.8 ±0.1
0.25
Infineon Technologies is an approved CECC manufacturer.
2.7 ±0.3
4.7 ±0.5
1.3 ±0.3
8 1)
8.5 1)
0.5 ±0.1
2.4
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
(tape&reel)
BTS436L2 G
Sales code
2.8 ±0.2
1)
1)
0.05
6x
0.8 ±0.1
1.7
8.4 ±0.4
Typical
All metal surfaces tin plated, except area of cut.
1±0.3
13.4
17±0.3
0.5 ±0.1
3.9 ±0.4
1.7
9.25 ±0.2
15.65 ±0.3
C
2.4
0.8 ±0.1
(15)
1.27 ±0.1
0...0.15
3.7 ±0.3
10.2 ±0.3
8.6 ±0.3
9.25 ±0.2
2.8 ±0.2
1)
13.4
17±0.3
15.65 ±0.3
0.05
0...0.15
1)
B
8.5 1)
3.7 -0.15
4.4
1.27 ±0.1
C
1)
A
9.8 ±0.15
0.1
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
Page 12
2003-Oct-01