IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability PG-TO220-2-2 • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDT04S60C PG-TO220-2-2 D04S60C C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<140 °C RMS forward current I F,RMS f =50 Hz 5.6 T C=25 °C, t p=10 ms 32 Surge non-repetitive forward current, I F,SM sine halfwave 4 Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 18 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 132 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 5.1 A2s Repetitive peak reverse voltage V RRM 600 V Diode dv/dt ruggedness dv/ dt V R = 0….480V 50 V/ns Power dissipation P tot T C=25 °C 42 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque Rev. 2.1 M3 and M3.5 screws page 1 60 Mcm 2008-06-06 IDT04S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 3.6 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.) from case for 10s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA Diode forward voltage VF I F=4 A, T j=25 °C - 1.7 1.9 I F=4 A, T j=150 °C - 2 2.4 V R=600 V, T j=25 °C - 0.5 50 V R=600 V, T j=150 °C - 2 500 - 8 - nC - - <10 ns pF Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C C V R=1 V, f = MHz - 130 - V R=300 V, f =1 MHz - 20 - V R=600 V, f =1 MHz - 20 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Rev. 2.1 Only capacitive charge occuring, guaranteed by design. page 2 2008-06-06 IDT04S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: R thJC(max); V F(max) 45 10 40 9 8 35 7 30 I F [A] P tot [W] 6 25 20 5 4 15 3 10 2 5 1 0 0 25 50 75 100 125 150 175 200 25 50 75 100 T C [°C] 125 150 175 200 T C [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: Tj 8 40 -55ºC 175ºC 150ºC 150ºC 25ºC 7 100ºC IF 30 IF 6 I F [A] I F [A] 5 4 3 -55ºC 20 175ºC 25ºC 2 10 100ºC 1 0 0 0 1 2 3 4 V F[V] Rev. 2.1 0 2 4 6 8 10 V F[V] page 3 2008-06-06 IDT04S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 101 20 0.1 0.5 0.2 1 18 100 16 14 I R [µA] P F(AV) [W] 175 °C 10-1 12 10 150 °C 100 °C 10-2 8 25 °C 6 -55 °C 10-3 4 2 10-4 100 0 0 2 4 6 8 200 I F(AV) [A] 300 400 500 600 V R [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 200 175 0.5 150 100 125 C [pF] Z thJC [K/W] 0.2 0.1 0.05 10-1 100 75 0.02 50 25 single pulse 10-2 10-5 0 10-4 10-3 10-2 10-1 100 101 102 103 V R [V] t P [s] Rev. 2.1 10-1 page 4 2008-06-06 IDT04S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 3.5 10 3.0 8 6 2.0 Q c [nC] E c [µC] 2.5 1.5 4 1.0 2 0.5 0.0 0 0 100 200 300 400 500 600 V R [V] Rev. 2.1 100 400 700 1000 di F/dt [A/µs] page 5 2008-06-06 IDT04S60C Package Outline:PG-TO220-2-2 Rev. 2.1 page 6 2008-06-06 IDT04S60C Rev. 2.1 page 7 2008-06-06