NTD4963N D

NTD4963N
Power MOSFET
30 V, 44 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
9.6 mW @ 10 V
30 V
• CPU Power Delivery
• DC−DC Converters
• Recommended for High Side (Control)
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
10.0
A
S
N−CHANNEL MOSFET
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
1.64
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
8.1
A
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
4
7.2
5.8
TA = 25°C
PD
1.1
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
44
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TC = 85°C
tp=10ms
Current Limited by Package
PD
35.7
132
A
TA = 25°C
IDmaxPkg
35
A
TJ,
TSTG
−55 to
+175
°C
IS
30
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
EAS
33.8
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
2 3
1
2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
W
IDM
Source Current (Body Diode)
1
32
TA = 25°C
Operating Junction and Storage
Temperature
1 2
4
Drain
4
Drain
AYWW
49
63NG
TA = 85°C
4
4
AYWW
49
63NG
Power Dissipation
RqJA (Note 2)
TA = 85°C
Steady
State
44 A
16 mW @ 4.5 V
Applications
Parameter
ID MAX
4
Drain
AYWW
49
63NG
•
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
Y
WW
4963N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 3
1
Publication Order Number:
NTD4963N/D
NTD4963N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.1
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient – Steady State (Note 3)
RqJA
77
Junction−to−Ambient – Steady State (Note 4)
RqJA
118
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
5
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
gFS
1.45
ID = 30 A
8.2
ID = 15 A
8.2
ID = 30 A
13.6
ID = 15 A
13.6
VDS = 1.5 V, ID = 30 A
40
mV/°C
9.6
16
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
115
Total Gate Charge
QG(TOT)
8.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
1035
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
220
1.2
3.5
pF
nC
3.5
VGS = 10 V, VDS = 15 V, ID = 30 A
16.2
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
12
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
20
14
3
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
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2
ns
NTD4963N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
7.0
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
17
ns
20
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.96
TJ = 125°C
0.83
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
17
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
9
ns
8
QRR
6
nC
Source Inductance (Note 7)
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 7)
LD
Gate Inductance (Note 7)
LG
3.46
Gate Resistance
RG
1.0
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Package
Shipping†
NTD4963NT4G
DPAK
(Pb−Free, Halide−Free)
2500 / Tape & Reel
NTD4963N−1G
IPAK
(Pb−Free, Halide−Free)
75 Units / Rail
NTD4963N−35G
IPAK Trimmed Lead
(Pb−Free, Halide−Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4963N
TYPICAL PERFORMANCE CURVES
VGS = 4.4 V
TJ = 25°C
VDS = 10 V
4.2 V
40
4.0 V
30
3.8 V
ID, DRAIN CURRENT (A)
50
3.6 V
20
3.4 V
10
3.2 V
2.8 V
0
2E−02
1.9E−02
1.8E−02
1.7E−02
1.6E−02
1.5E−02
1.4E−02
1.3E−02
1.2E−02
1.1E−02
1.0E−02
9E−03
8E−03
7E−03
6E−03
5E−03
1
4
3
2
50
40
30
5
TJ = 25°C
20
10
0
TJ = 125°C
1
2
1.5
TJ = −55°C
3
2.5
4
3.5
5
5.5
45
50
4.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
60
4.6 V thru 10 V
20E−03
ID = 30 A
TJ = 25°C
TJ = 25°C
VGS = 4.5 V
15E−03
10E−03
4
3
6
5
8
7
9
10
VGS = 10 V
5E−03
0E+00
10
15
20
25
30
35
40
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.8
1.6
ID = 30 A
VGS = 10 V
1.4
1.2
1.0
TJ = 150°C
TJ = 125°C
100
10
TJ = 25°C
1
0.8
0.6
−50
VGS = 0 V
1,000
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
60
0.1
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTD4963N
1200
Ciss
VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
TJ = 25°C
C, CAPACITANCE (pF)
1000
800
600
400
Coss
200
0
Crss
0
10
5
15
20
25
30
10
QT
9
8
7
6
Qgs
5
4
3
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 30 A
2
1
0
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
t, TIME (ns)
100
td(off)
tr
10
td(on)
tf
1
10
RG, GATE RESISTANCE (W)
25
TJ = 25°C
20
15
10
5
0
100
0.4
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
0.6
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
I D, DRAIN CURRENT (A)
VGS = 30 V
Single Pulse
TC = 25°C
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0.01
18
VGS = 0 V
VDD = 15 V
ID = 15 A
VGS = 11.5 V
100
16
30
1000
1000
10
4
6
12
14
8
QG, TOTAL GATE CHARGE (nC)
2
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
1
Qgd
35
ID = 26 A
30
25
20
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
150
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTD4963N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD4963N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
D
H
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK (STRAIGHT LEAD DPAK)
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD4963N/D