INFINEON TLE4274GSV25

Voltage Regulator
TLE 4274 / 3.3V;2.5V
Features
•
•
•
•
•
•
Output voltage: 3.3 V/2.5 V ± 4%
Current capability 400 mA
Very low current consumption
Short-circuit proof
Reverse polarity proof
Suitable for use in automotive electronics
P-SOT223-4
Functional Description
The TLE 4274 / 3.3V;2.5V is a voltage regulator available
in a SOT223 and TO252 package. The IC regulates an
input voltage up to 40 V to VQrated = 3.3 V/2.5 V. The
maximum output current is 400 mA. The IC is shortcircuit proof and has a shutdown circuit protecting it
against overtemperature. The TLE 4274 is also available
as 5 V, 8.5 V and 10 V version. Please refer to the data
sheet TLE 4274.
P-TO252-3-1
Dimensioning Information on External Components
The input capacitor CI is necessary for compensating line influences. Using a resistor of
approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can
be damped. The output capacitor CQ is necessary for the stability of the regulation circuit.
Stability is guaranteed for capacities CQ ≥ 10 µF with an ESR of ≤ 2.5 Ω within the
operating temperature range.
Type
Ordering Code
Package
TLE 4274 GSV33
Q67006-A9289
P-SOT223-4-1
TLE 4274 DV33
Q67006-A9348
P-TO252-3-1
TLE 4274 GSV25
Q67006-A9359
P-SOT223-4-1
Data Sheet
1
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the
output voltage and drives the base of the series transistor via a buffer. Saturation control
as a function of the load current prevents any oversaturation of the power element. The
IC also includes a number of internal circuits for protection against:
•
•
•
Overload
Overtemperature
Reverse polarity
P-TO252-3-1 (D-PAK)
P-SOT223-4-1
GND
Ι
1
GND
2
Q
3
4
GND
1
3
AEP02282
Ι
Q
AEP02561
Figure 1
Pin Configuration (top view)
Table 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
I
Input; block to ground directly at the IC with a ceramic capacitor.
2, 4
GND
Ground; P-TO252-3-1: internally connected to heatsink
3
Q
Output; block to ground with capacitor CQ ≥ 10 µF, ESR ≤ 2.5 Ω
Data Sheet
2
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Saturation
Control and
Protection
Circuit
Temperature
Sensor
Ι
1
3
Control
Amplifier
Q
Buffer
Bandgap
Reference
2
GND
AEB02283
Figure 2
Data Sheet
Block Diagram
3
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Table 2
Absolute Maximum Ratings
Tj = -40 to 150 °C
Parameter
Symbol
Limit Values
Unit
Test Condition
Min.
Max.
VI
II
-42
45
V
–
–
–
–
Internally limited
VQ
IQ
-1.0
40
V
–
–
–
–
Internally limited
IGND
–
100
mA
–
Tj
Tstg
–
150
°C
–
-50
150
°C
–
Input
Voltage
Current
Output
Voltage
Current
Ground
Current
Temperature
Junction temperature
Storage temperature
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.
Table 3
Operating Range
Parameter
Symbol
Input voltage
Junction temperature
Limit Values
Unit
Remarks
Min.
Max.
VI
Tj
4.7
40
V
–
-40
150
°C
–
Rthja
Rthja
Rthjc
Rthjc
–
100
K/W
SOT2231)
–
70
K/W
TO2522)
–
25
K/W
SOT223
–
4
K/W
TO252
Thermal Resistance
Junction ambient
Junction ambient
Junction case
Junction case
2
1) Soldered in, 1 cm copper area at pin 4, FR4
2) Soldered in, minimal footprint, FR4
Data Sheet
4
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Table 4
Characteristics
VI = 6 V; -40 °C < Tj < 150 °C (unless otherwise specified)
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Measuring Condition
Output voltage
V33-Version
VQ
3.17
3.3
3.44
V
5 mA < IQ < 400 mA
4.7 V < VI < 28 V
Output voltage
V33-Version
VQ
3.17
3.3
3.44
V
5 mA < IQ < 200 mA
4.7 V < VI < 40 V
Output voltage
V25-Version
VQ
2.4
2.5
2.6
V
5 mA < IQ < 400 mA
4.7 V < VI < 28 V
Output voltage
V25-Version
VQ
2.4
2.5
2.6
V
5 mA < IQ < 200 mA
4.7 V < VI < 40 V
Output current
limitation1)
IQ
400
600
–
mA
–
Current consumption; Iq
Iq = II - IQ
–
100
220
µA
IQ = 1 mA
Current consumption; Iq
Iq = II - IQ
–
8
15
mA
IQ = 250 mA
Current consumption; Iq
Iq = II - IQ
–
20
30
mA
IQ = 400 mA
Drop voltage1)
V33-Version
Vdr
–
0.7
1.2
V
Drop voltage1)
V25-Version
Vdr
–
1.0
2.0
V
Load regulation
∆VQ
–
40
70
mV
Line regulation
∆VQ
–
10
25
mV
Power supply ripple
rejection
PSRR
–
60
–
dB
IQ = 300 mA
Vdr = VI - VQ
IQ = 300 mA
Vdr = VI - VQ
IQ = 5 mA to 300 mA;
VI = 6 V
∆Vl = 12 V to 32 V
IQ = 5 mA
fr = 100 Hz;
Vr = 0.5 Vpp
Temperature output
voltage drift
dVQ/dT
–
0.5
–
mV/K
–
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 6 V.
Data Sheet
5
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Ι
1
4
Q
TLE 4274 GSV33
VΙ
CQ
100 µ F
CΙ
100 nF
2, 4
CQ
10 µF
GND
R Load
VQ
AES02284
Figure 3
Measuring Circuit
5 - 40 V
Input
Ι 1
CΙ
100 nF
4 Q
TLE 4274 GSV33
2, 4
3.3 V / 2.5 V
Output
CQ
10 µF
GND
AES02285
Figure 4
Data Sheet
Application Circuit
6
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Ι
4.5 - 40 V
Q
CΙ
470 nF
CQ1
22 µF
TLE 4276
10 V
e.g. to sensor
INH
e.g. to µC
Q
3.3 V
to µC
1 kΩ
GND
Ι
TLE 4274 GSV33
CQ2
10 µF
GND
Figure 5
Data Sheet
AES02579
Application Example
7
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Typical Performance Characteristics
Output Voltage VQ versus
Junction Temperature Tj (V33-Version)
Output Voltage VQ versus
Junction Temperature Tj (V25-Version)
AED02288
3.5
AED02806
2.7
VQ V
VQ
3.4
V
2.6
VI = 6 V
VI = 6 V
3.3
2.5
3.2
2.4
3.1
2.3
3.0
2.2
2.9
-40
0
40
80
2.1
-40
120 ˚C 160
0
40
80
120 ˚C 160
Tj
Tj
Input Current Iq versus
Input Voltage VI (V33-Version)
Input Current Iq versus
Input Voltage VI (V25-Version)
AED01969
3.5
mA
II
3.0
2.5
2.5
2.0
2.0
1.5
T j = 25 ˚C
R I = 3.3 k Ω
1.5
1.0
1.0
0.5
0.5
0
0
-2
-50
-25
0
25
V
-2
-50
50
T j = 25 ˚C
R I = 3.3 k Ω
-25
0
25
V
50
VI
VI
Data Sheet
AED03016
3.5
mA
II
3.0
8
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Current Consumption Iq versus
Output Current IQ (low load)
Current Consumption Iq versus
Output Current IQ (high load)
AED02268
0.6
Iq mA
Iq mA
0.5
50
T j = 25 ˚C
VI = 13.5 V
0.4
40
0.3
30
0.2
20
0.1
10
0
0
10
20
AED02267
60
30
40
mA
0
60
T j = 25 ˚C
VI = 13.5 V
0
100
200 300 400
IQ
600
IQ
Output Current IQ versus
Input Voltage VI
Region of Stability
for CQ = 10 µF
AED02287
800
mA
AED03050
10
Ω
ESR 9
mA
ΙQ
8
600
7
T j = 25 C
6
VQ = 0 V
5
400
4
3
200
2
1
0
0
Data Sheet
10
20
30
0
0.2
40 V 50
VΙ
100
101
102 mA 500
IQ
9
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
Package Outlines
1.6 ±0.1
6.5 ±0.2
0.1 MAX.
2
B
0.5 MIN.
1
+0.2
acc. to
DIN 6784
3.5 ±0.2
4
7 ±0.3
3 ±0.1
15˚ MAX.
A
3
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
M
A
0.25
M
B
GPS05560
Figure 6
P-SOT223-4-1 (Plastic Small Outline Transistor)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
10
Rev. 2.1, 2004-01-01
TLE 4274 / 3.3V;2.5V
6.5 +0.15
-0.10
2.3 +0.05
-0.10
4.57
0.51 min
0.15 max
per side
0.9 +0.08
-0.04
B
0.8 ±0.15
9.9 ±0.5
6.22 -0.2
1 ±0.1
A
5.4 ±0.1
3x
0.75 ±0.1
0...0.15
0.5 +0.08
-0.04
2.28
1 ±0.1
0.25
M
A B
0.1
GPT09051
All metal surfaces tin plated, except area of cut.
Figure 7
P-TO252-3-1 (Plastic Transistor Single Outline)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
11
Rev. 2.1, 2004-01-01
Edition 2004-01-01
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
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circuits, descriptions and charts stated herein.
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