Type IPD05N03LB G OptiMOS®2 Power-Transistor IPS05N03LB G Product Summary Package Marking • Qualified according to JEDEC1) for target applications V DS 30 V R DS(on),max 4.8 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPD05N03LB G IPS05N03LB G Package PG-TO252-3-11 PG-TO251-3-11 Marking 05N03LB 05N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 90 T C=100 °C 74 Pulsed drain current I D,pulse T C=25 °C3) 420 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 120 Reverse diode dv /dt dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.6 Unit A mJ kV/µs ±20 V 94 W -55 ... 175 °C 55/175/56 page 1 2006-05-11 IPD05N03LB G Parameter IPS05N03LB G Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 75 6 cm2 cooling area5) - - 50 30 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 6.0 7.7 mΩ V GS=4.5 V, I D=50 A, SMD version - 5.8 7.5 V GS=10 V, I D=60 A - 4.1 5.0 V GS=10 V, I D=60 A, SMD version - 3.9 4.8 - 1 - Ω 48 96 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=60 A 1) J-STD20 and JESD22 1) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 104 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.6 page 2 2006-05-11 IPD05N03LB G Parameter IPS05N03LB G Values Symbol Conditions Unit min. typ. max. - 2400 3200 - 860 1100 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 110 160 t d(on) - 9 14 - 7 10 - 28 42 V GS=0 V, V DS=15 V, f =1 MHz Rise time tr Turn-off delay time t d(off) Fall time tf - 4.6 7 Gate to source charge Q gs - 8 11 Gate charge at threshold Q g(th) - 3.9 5.1 Gate to drain charge Q gd - 5.1 8 Switching charge Q sw - 9 13 Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 3.3 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 16 22 Output charge Q oss V DD=15 V, V GS=0 V - 19 26 - - 78 - - 420 V DD=15 V, V GS=10 V, I D=45 A, R G=2.7 Ω pF ns Gate Charge Characteristics 6) V DD=15 V, I D=45 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=78.125 A, T j=25 °C - 0.93 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 15 nC 6) Rev. 1.6 T C=25 °C A See figure 16 for gate charge parameter definition page 3 2006-05-11 IPD05N03LB G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 IPS05N03LB G 100 100 80 80 I D [A] P tot [W] 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 10 1 µs limited by on-state resistance 10 µs 0.5 1 100 100 µs Z thJC [K/W] 0.2 I D [A] DC 1 ms 0.1 0.05 0.1 0.02 single pulse 0.01 10 10 ms 0.01 1 0.001 0.1 1 10 100 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.6 0 10-6 page 4 2006-05-11 IPD05N03LB G IPS05N03LB G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 12 3.5 V 4.5 V 180 3.8 V 10 10 V 160 140 8 R DS(on) [mΩ] 4.1 V 120 I D [A] 3.2 V 100 3.8 V 80 4.1 V 4.5 V 6 4 60 10 V 3.5 V 40 2 3.2 V 20 3V 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 100 90 80 80 70 60 I D [A] g fs [S] 60 40 50 40 30 20 20 175 °C 25 °C 10 0 0 0 1 2 3 4 5 Rev. 1.6 0 10 20 30 40 50 60 I D [A] V GS [V] page 5 2006-05-11 IPD05N03LB G IPS05N03LB G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=60 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 10 2.5 9 8 2 7 98 % 5 typ 4 1.5 V GS(th) [V] R DS(on) [mΩ] 400 µA 6 40 µA 1 3 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 10000 1000 25 °C, 98% Ciss 25 °C Coss 100 175 °C I F [A] C [pF] 1000 175 °C, 98% Crss 100 10 10 1 0 5 10 15 20 25 30 V DS [V] Rev. 1.6 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2006-05-11 IPD05N03LB G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=45 A pulsed parameter: Tj(start) parameter: V DD 100 IPS05N03LB G 12 15 V 25 °C 10 100 °C 6V 24 V 150 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 20 40 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 38 V GS 36 Qg 34 V BR(DSS) [V] 32 30 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.6 page 7 2006-05-11 IPD05N03LB G Package Outline IPS05N03LB G PG-TO252-3-11 PG-TO252-3-11: Outline Footprint: Rev. 1.6 Packaging: page 8 2006-05-11 IPD05N03LB G Package Outline IPS05N03LB G PG-TO251-3-11 PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.6 page 9 2006-05-11 IPD05N03LB G IPS05N03LB G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.6 page 10 2006-05-11