EW IL256A N AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES • Guranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input Industry Standard SOIC-8 Surface • Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel Option (Conforms to EIA Standard RS481A) Dimensions in inches (mm) .120±.005 (3.05±.13) .240 (6.10) .192±.005 (4.88±.13) The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) minimum of 20% at IF= 10 mA. Detector Collector-Emitter Breakdown Voltage .............. 30 V Emitter-Collector Breakdown Voltage ................ 5 V Collector-Base Breakdown Voltage ................. 70 V Power Dissipation ..................................... 150 mW Derate Linearly from 25°C ..................... 2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector).................................... 240 mW Derate Linearly from 25°C ..................... 3.1 mW/°C Storage Temperature .................. –55°C to +150°C Operating Temperature ............... –55°C to +100°C Soldering Time at 260°C..............................10 sec. 8 2 7 3 6 4 5 .020±.004 (.15±.10) 2 plcs. NC Base Collector Emitter 7° .058±.005 (1.49±.13) 40° .008 (.20) .050 (1.27) typ. .021 (.53) .125±.005 (3.18±.13) 5° max. R.010 (.25) max. Lead Coplanarity ±.0015 (.04) max. Characteristics (TA=25°C) Symbol Maximum Ratings Emitter Continuous Forward Current......................... 60 mA Power Dissipation at 25°C ........................... 90 mW Derate Linearly from 25°C ..................... 0.8 mW/°C 1 .015±.002 (.38±.05) .004 (.10) .008 (.20) These circuit elements are constructed with a standard SOIC-8 foot print. Anode/ Cathode Cathode/ Anode NC NC .016 (.41) Pin One ID DESCRIPTION The IL256A is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. CL .154±.005 (3.91±.13) Min. Typ. Max. Unit Condition 1.2 1.5 V IF=± 10 mA V V V IC=1 mA IE=100 µA IC=100 µA nA VCE=10 V % IF=± 10 mA, VCE=5 V Emitter Forward Voltage VF Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector Base Leakage Current, Collector-Emitter BVCEO BVECO BVCBO 30 5 70 ICEO 50 10 90 5 50 Package DC Current Transfer Ratio CTR Symmetry CTR at +10mA 20 0.5 1.0 2.0 CTR at –10 mA Saturation Voltage, Collector-Emitter VCEsat Isolation Voltage, Input to Output VIO 5–1 IF=± 16 mA, IC=2 mA 0.4 2500 VACRMS Figure 5. Normalized saturated CTR Figure 1. LED forward current versus forward voltage Ta = 25°C Ta = 50°C Ta = 70°C Ta = 100°C 60 0.8 40 Normalized CTR IF - LED Forward Current - mA 1.0 85°C 20 25°C 0 -55°C -20 Vce(sat) = 0.4V 0.6 0.4 Normalized to: -40 0.2 -60 -1.5 0.0 If = 10 mA. Vce =10V Ta = 25°C -1.0 -0.5 0.0 0.5 1.0 VF - LED Forward Voltage - V 1.5 .1 1 10 If - LED Current - mA 100 Figure 6. Normalized CTRcb Figure 2. Forward voltage versus forward current 1.5 Normalized to: If=10mA, Ta=25°C 1.3 Normalized CTRcb Vf-Forward Voltage - V 1.4 Ta = -55°C 1.2 1.1 Ta = 25°C 1.0 0.9 1.0 0.5 25°C 50°C 70°C Ta = 100°C 0.8 0.0 0.7 .1 1 10 .1 100 If - Forward Current - mA 1 10 100 If - LED Current -mA Figure 7. Photocurrent versus LED current Figure 3. Peak LED current versus duty factor, Tau 1000 10000 Duty Factor t τ DF = /t .05 .1 .2 100 10 10-6 .5 100 10 25°C 70°C 1 .1 10-5 10-4 10-3 10-2 10-1 10 0 .1 10 1 1 Figure 4. Normalized CTR versus If and Ta Figure 8. Base current versus If and HFE 2.0 700 100 Normalized to : Ta = 25°C Ta = 50°C Ta = 70°C Ta = 100°C Vce=0.4V, Ta=25°C If = 10 mA, Vce =10V 600 Ta = 25°C HFE - Transistor Gain 1.5 100 If - LED Current - mA t - LED Pulse Duration - s Normalized CTR 10 1.0 0.5 500 10 400 300 1 If- LED Current-mA 1000 .005 .01 .02 Icb - Photocurrent - µA If(pk) - Peak LED Current - mA τ 200 0.0 .1 1 10 100 100 1 If - LED Current - mA 10 100 .1 1000 Ib - Base Current - µA IL256A 5–2 Figure 11. Base emitter voltage versus base current Figure 9. Normalized HFE versus Ib, Ta 1000 1.2 Normalized to: 100 1.0 Ta = 25°C Vce = 10V 0.8 NHFE -20°C NHFE 25°C NHFE 50°C NHFE 70°C 0.6 10 100 Ib - Base Current - µA 1000 .1 .01 0.5 0.6 0.7 0.8 Figure 12. Collector-emitter leakage current versus temperature 1.5 10 5 Iceo - Collector-Emitter - nA Normalized to: Normalized Saturated HFE 1 Vbe - Base Emitter Voltage - V Figure 10. Normalized saturated HFE versus Ib HFE at Vce = 10V, Icb = 10µA 10 4 Ta = 25°C 1.0 10 3 Ta = -20°C Ta =25°C Ta = 50°C Ta = 70°C 0.5 10 .001 0.4 0.4 1 Ta = 25°C Ib - Base Current - µA Normalized HFE Ib = 10µA 10 2 Vce = 10V 10 1 Vce(sat) = 0.4V TYPICAL 10 0 10 -1 0.0 1 10 100 10 -2 -20 1000 Ib - Base Current - µA 0 20 40 60 80 Ta - Ambient Temperature - °C 100 IL256A 5–3