BSM 25 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 25 GB 120 DN2 1200V 38A Package Ordering Code HALF-BRIDGE 1 C67076-A2109-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 38 TC = 80 °C 25 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 76 TC = 80 °C 50 Ptot Power dissipation per IGBT TC = 25 °C W 200 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.6 Diode thermal resistance, chip case RthJCD ≤1 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 + 150 °C -55 ... + 150 K/W - 55 / 150 / 56 Mar-29-1996 BSM 25 GB 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 25 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 25 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.5 0.8 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 2 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 180 AC Characteristics Transconductance gfs VCE = 20 V, IC = 25 A Input capacitance 10 nF - 1.65 - - 0.25 - - 0.11 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Mar-29-1996 BSM 25 GB 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Rise time - 75 150 - 65 130 - 420 600 - 50 75 tr VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Free-Wheel Diode Diode forward voltage VF V IF = 25 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 25 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.13 - Qrr µC IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 2.3 - Tj = 125 °C - 6 - Semiconductor Group 3 Mar-29-1996 BSM 25 GB 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 220 tp = 10.0µs W A Ptot 180 IC 160 10 1 100 µs 140 120 100 1 ms 80 10 0 60 10 ms 40 20 0 0 DC 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 45 A K/W IC ZthJC 35 10 -1 30 25 D = 0.50 20 0.20 10 15 -2 0.10 0.05 0.02 10 0.01 single pulse 5 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Mar-29-1996 BSM 25 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C IC 50 50 A A 40 35 17V 15V 13V 11V 9V 7V IC 40 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 50 A IC 40 35 30 25 20 15 10 5 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Mar-29-1996 BSM 25 GB 120 DN2 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 25 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C Ciss 600 V 14 800 V 10 0 12 10 Coss 8 10 -1 Crss 6 4 2 0 0 20 40 60 80 100 120 10 -2 0 140 nC 170 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Mar-29-1996 BSM 25 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A 10 3 t 10 3 tdoff t ns tdoff ns tdon 10 2 10 2 tdon tr tr tf 10 1 0 10 20 30 40 A tf 10 1 0 60 20 40 60 80 100 120 140 IC Ω Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 25 A Eon 10 10 mWs E mWs 8 E 8 7 7 6 6 5 5 Eoff 4 3 2 2 1 1 10 20 30 40 A 60 IC Semiconductor Group Eon 4 3 0 0 180 RG 0 0 Eoff 20 40 60 80 100 120 140 Ω 180 RG 7 Mar-29-1996 BSM 25 GB 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 1 50 A IF Diode K/W 40 ZthJC 10 0 35 30 Tj=125°C Tj=25°C 25 10 -1 D = 0.50 0.20 20 0.10 15 0.05 10 -2 0.02 10 single pulse 0.01 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -3 -5 10 8 Mar-29-1996 BSM 25 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 190 g Semiconductor Group 9 Mar-29-1996