INFINEON IPB09N03LAG

IPB09N03LA G
OptiMOS®2 Power-Transistor
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
V DS
25
V
R DS(on),max (SMD version)
8.9
mΩ
ID
50
A
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TO263-3-2
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
Marking
IPB09N03LA G
PG-TO263-3-2
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
50
T C=100 °C
46
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C3)
350
Avalanche energy, single pulse
E AS
I D=45 A, R GS=25 Ω
75
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
Rev. 1.6
±20
V
63
W
-55 ... 175
°C
55/175/56
J-STD20 and JESD22
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IPB09N03LA G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.4
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
25
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A,
SMD version
-
12.1
15.1
mΩ
V GS=10 V, I D=30 A,
SMD version
-
7.4
8.9
-
1
-
Ω
22
45
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Current is limited by bondwire; with an
R thJC=2.4 K/W the chip is able to carry 64
3)
See figure 3
4)
T j,max=150 °C and duty cycle D <0.25 for
V GS<-5 V
5)
Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm2 (one layer, 70
Rev. 1.6
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IPB09N03LA G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1235
1642
-
474
630
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
61
92
Turn-on delay time
t d(on)
-
8.9
13
Rise time
tr
-
73
109
Turn-off delay time
t d(off)
-
22
33
Fall time
tf
-
3.2
4.8
Gate to source charge
Q gs
-
4.3
5.7
Gate charge at threshold
Q g(th)
-
2.0
2.6
Gate to drain charge
Q gd
-
2.8
4.3
Switching charge
Q sw
-
5.2
7.3
Gate charge total
Qg
-
10
13
Gate plateau voltage
V plateau
-
3.5
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
8.7
12
Output charge
Q oss
V DD=15 V, V GS=0 V
-
10
14
-
-
50
-
-
350
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 6)
V DD=15 V, I D=25 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.99
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
6)
Rev. 1.6
T C=25 °C
A
See figure 16 for gate charge parameter definition
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IPB09N03LA G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
70
60
60
50
40
I D [A]
P tot [W]
40
30
20
20
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
10
1 µs
limited by on-state
resistance
0.5
10 µs
100
Z thJC [K/W]
I D [A]
1
100 µs
DC
10
1 ms
0.2
0.1
0.05
0.1
0.02
10 ms
0.01
single pulse
1
0.01
0.1
1
10
100
-5
10
0
100-4
10-30
10-20
10-1 0 100 1
t p [s]
V DS [V]
Rev. 1.6
-6
010
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IPB09N03LA G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
70
3.2 V
10 V
3.5 V
3.8 V
4.1 V
4.5 V
60
25
4.1 V
50
R DS(on) [mΩ]
20
40
I D [A]
3.8 V
30
3.5 V
15
4.5 V
10
20
10 V
3.2 V
10
5
3V
2.8 V
0
0
0
1
2
0
3
10
20
V DS [V]
30
40
50
60
70
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
80
90
70
80
60
70
50
g fs [S]
I D [A]
60
50
40
40
30
30
20
20
10
175 °C
10
25 °C
0
0
0
1
2
3
4
5
Rev. 1.6
0
20
40
60
80
I D [A]
V GS [V]
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IPB09N03LA G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
18
2.5
16
2
14
200 µA
98 %
V GS(th) [V]
R DS(on) [mΩ]
12
10
typ
8
1.5
20 µA
1
6
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. Capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
10000
1000
25 °C
Ciss
1000
100
175°C 98%
Coss
I F [A]
C [pF]
175 °C
25°C 98%
100
10
Crss
10
1
0
5
10
15
20
25
30
V DS [V]
Rev. 1.6
0.0
0.5
1.0
1.5
2.0
V SD [V]
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IPB09N03LA G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: Tj(start)
parameter: V DD
100
12
15 V
10
25 °C
100 °C
150 °C
5V
20 V
V GS [V]
I AV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
29
V GS
28
Qg
27
V BR(DSS) [V]
26
25
24
V g s(th)
23
22
Q g(th)
21
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.6
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IPB09N03LA G
Package Outline
PG-TO263-3-2
PG-TO263-3-2: Outline
Footprint
Rev. 1.6
Packaging
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2006-05-11
IPB09N03LA G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.6
page 9
2006-05-11