BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability • SIEGET 25 GHz fT - Line • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP420F Marking AMs 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 °C 4.5 TA ≤ 0 °C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 3 Total power dissipation2) Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 111 °C 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 2007-04-20 1 BFP420F Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 60 95 130 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V, pulse measured 1For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-20 2 BFP420F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 18 25 - GHz Ccb - 0.15 0.3 Cce - 0.33 - Ceb - 0.5 - F - 1.1 - G ma - 19.5 - |S21| 2 - 16.5 - dB IP 3 - 24 - dBm P-1dB - 10.5 - IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output2) VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 2007-04-20 3 BFP420F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.20045 28.383 2.0518 19.705 1.1724 3.4849 1.8063 6.7661 1 0.81969 2.3249 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = Ω fF ps mA V ns - A A 72.534 0.48731 7.8287 0.69141 8.5757 0.31111 0.8051 0.42199 0 0.30232 0 0 0.73234 Ω V deg F - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.2432 19.049 1.3325 0.019237 0.72983 0.10105 0.46576 0.23794 234.53 0.3 0.75 1.11 300 fA fA mA Ω V fF V eV K C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C CB L BO L BI B B’ Transistor Chip E’ C’ L CI L CO C C’-E’Diode C BE C CE L EI L EO E EHA07389 The TSFP-4 package has two emitter leads. To avoid high complexity fo the package equivalent circuit, both leads are combined in one electrical connection. RLXI are series resistors for the inductances LXI and Kxa-by are the coupling coefficients between the inductances Lax and Lyb. The referencepin for the couple ports are B, E, C, B`, E`, C For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBO = LEO = LCO = LBI = LEI = LCI = CBE = CBC = CCE = KBO-EO= KBO-CO= KEO-CO= KCI-EI= KBI-CI= KBI-EI= RLBI = RLEI = RLCI = 0.22 0.28 0.22 0.42 0.26 0.35 34 2 33 0.1 0.01 0.11 -0.05 -0.08 0.2 0.15 0.11 0.13 nH nH nH nH nH nH fF fF fF Ω Ω Ω Valid up to 6GHz 2007-04-20 4 BFP420F For non-linear simulation: · Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. · If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. · Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: · This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: · Higher gain because of lower emitter inductance. · Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. 2007-04-20 5 Package TSFP-4 BFP420F Package Outline 0.55 ±0.04 0.2 ±0.05 3 1 1.2 ±0.05 0.2 ±0.05 4 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.4 ±0.05 0.15 ±0.05 0.5 ±0.05 0.5 ±0.05 Foot Print 0.9 0.45 0.35 0.5 0.5 Marking Layout (Example) Manufacturer BFP420F Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 1.4 8 4 Pin 1 0.7 1.55 2007-04-20 6 BFP420F Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-20 7