BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W (PNP) 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR92W Marking P1s 1=B Pin Configuration 2=E 3=C Package SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 86 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 230 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-03-2001 BFR92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 100 µA hFE 40 100 200 - DC characteristics V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V 2 Aug-03-2001 BFR92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 3.5 5 - Ccb - 0.43 0.6 Cce - 0.25 - Ceb - 0.7 - AC characteristics (verified by random sampling) fT Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz - 1.8 - f = 1.8 GHz - 2.9 - IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-03-2001 BFR92W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA BF = 94.733 - NF = 1.0947 - VAF = 30 V IKF = 0.46227 A ISE = 129.55 fA NE = 1.9052 - BR = 10.729 - NR = 0.8983 - VAR = 14.599 V IKR = 0.01 A ISC = 0.75557 fA NC = 1.371 - RB = 14.998 IRB = 0.01652 mA RBM = 7.8145 RE = 0.29088 RC = 0.13793 CJE = 10.416 fF VJE = 0.70618 V MJE = 0.34686 TF = 26.796 ps XTF = 0.3817 - VTF = 0.32861 V ITF = 4.4601 mA PTF = 0 deg CJC = 946.47 fF VJC = 0.84079 V MJC = 0.4085 - XCJC = 0.13464 - TR = 1.2744 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99545 - TNOM 300 K L BI = 0.57 nH L BO = 0.4 nH L EI = 0.43 nH L EO = 0.5 nH L CI = 0 nH L CO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-03-2001 BFR92W Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-03-2001 BFR92W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.8 6 GHz pF 5 10V 4 fT Ccb 4.5 0.6 3V 3.5 3 2V 2.5 0.5 2 1.5 1V 0.4 1 0.7V 0.5 0.3 0 4 8 12 16 V 0 0 22 5 10 15 20 25 mA VCB 35 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 18 dB dB 10V 10V 5V 14 5V 3V 12 8 3V 6 2V 2V G G 10 8 4 6 2 4 1V 2 0.7V 0 0 1V -2 -2 -6 0 -4 0.7V -4 5 10 15 20 25 mA -6 0 35 IC 5 10 15 20 25 mA 35 IC 6 Aug-03-2001 BFR92W Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) = Parameter, f = 900MHz 1) V |S21|2 = f(VCE):--------f = Parameter CE 25 18 IC=15mA dB 0.9GHz 5V 12 3V IP 3 14 1.8GHz G 4V dBm 0.9GHz 2V 15 10 1.8GHz 8 1V 10 6 4 5 2 0 0 2 4 6 8 10 V 0 0 13 5 10 15 20 mA 30 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 28 IC=15mA dB IC =15mA dB 26 20 S21 G 22 16 18 12 14 8 10 10V 3V 6 10V 2V 4 1V 1V 0 2 0.7V -2 0 0.5 1 1.5 2 2.5 GHz 0.7V -4 0 3.5 f 0.5 1 1.5 2 2.5 GHz 3.5 f 7 Aug-03-2001