Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions ICBO VCB = 60V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 60V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 200 MHz 80 mV Noise voltage *h FE NV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 1200 0.2 V Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 1 Transistor 2SD1011 PC — Ta IC — VCE 60 200 100 60 IB=100µA 80µA 60µA 50µA 40µA 50 40 30µA 30 20µA 20 Collector current IC (mA) 300 10µA Ta=75˚C –25˚C 40 30 20 10 10 0 60 80 100 120 140 160 0 0 2 4 3 1 0.3 Ta=75˚C 0.1 –25˚C 0.03 10 30 25˚C –25˚C 800 400 0 0.1 100 Collector current IC (mA) 0.3 100 IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 1.6 1 3 80 10 30 120 80 40 0 – 0.1 – 0.3 100 –1 –3 –30 –100 NV — VCE 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 –10 Emitter current IE (mA) VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 2.0 160 NV — IC 4 1.2 VCB=10V Ta=25˚C Collector current IC (mA) Cob — VCB 5 0.8 fT — I E Ta=75˚C 1200 6 0.4 Base to emitter voltage VBE (V) 200 1600 10 3 0 VCE=10V Forward current transfer ratio hFE 30 1 12 2000 IC/IB=10 0.3 10 hFE — IC 100 0.01 0.1 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 25˚C 6 Transition frequency fT (MHz) 40 Noise voltage NV (mV) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 500 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V)