PANASONIC MA2Z331

Variable Capacitance Diodes
MA2Z331
Silicon epitaxial planar type
Unit : mm
INDICATES
CATHODE
VR
12
V
Forward current (DC)
IF
20
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
Reverse voltage (DC)
2.5 ± 0.2
Unit
0.16 − 0.06
Rating
0.9 ± 0.1
Symbol
1.7 ± 0.1
0 to 0.05
Parameter
0.4 ± 0.15
2
+ 0.1
■ Absolute Maximum Ratings Ta = 25°C
1
0.4 ± 0.15
0.3 − 0.05
• Small series resistance rD. rD = 0.18 Ω (typ.)
• Good linearity of C − V curve
• Small type package, optimum for down-sizing of equipment
1.25 ± 0.1
■ Features
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 6T
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Diode capacitance
Capacitance ratio
Symbol
IR
Conditions
VR = 1 V, f = 1 MHz
17.0
CD(2V)
VR = 2 V, f = 1 MHz
14.0
CD(4V)
VR = 4 V, f = 1 MHz
10.0
CD(10V)
VR = 10 V, f = 1 MHz
CD(1V)/CD(4V)
rD
Typ
VR = 12 V
CD(1V)
CD(2V)/CD(10V)
Series resistance*
Min
Unit
10
nA
20.0
pF
16.0
pF
12.4
pF
5.5
6.0
6.5
pF
1.53
1.6
1.83

2.5
2.75

0.18
0.22
Ω
2.25
CD = 9 pF, f = 470 MHz
15.0
Max
Note) 1．Rated input/output frequency: 470 MHz
2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA2Z331
Variable Capacitance Diodes
CD  VR
100
20
10
5
3
0
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
IR  T a
100
Reverse current IR (nA)
25°C
60
40
VR = 10 V
10
1
0.1
0
20
40
60
80 100 120 140 160
Reverse current Ta (°C)
0
VR = 1 V
2V
1.02
4V
10 V
1.01
1.00
20
2
2
Ta = 60°C
80
f = 1 MHz
1.03
− 40°C
CD(Ta)
CD(Ta = 25°C)
30
0.01
1.04
100
Forward current IF (mA)
Diode capacitance CD (pF)
50
1
CD  Ta
IF  V F
120
f = 1 MHz
Ta = 25°C
0.99
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
1.2
0.98
0
20
40
60
80
Reverse current Ta (°C)
100