Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Parameter Symbol Ratings Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics Parameter 0.5 +0.1 3 0.5 (Ta=25˚C) Collector to base voltage 1 +0.1 0.15–0.05 0 to 0.1 ■ Absolute Maximum Ratings 0.4 2 0.75±0.15 ● 0.8±0.1 0.45±0.1 0.3 ● 1.6±0.1 ● High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 ● 0.4 0.2–0.05 ■ Features 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS-Mini Type Package Marking symbol : 3A (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 9V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA Forward current transfer ratio hFE VCE = 3V, IC = 10mA Collector output capacitance Cob VCB = 3V, IE = 0, f = 1MHz 0.4 pF Transition frequency fT VCE = 3V, IC = 10mA, f = 2GHz 12.0 GHz Noise figure NF VCE = 3V, IC = 3mA, f = 1.5GHz 1.8 dB VCE = 3V, IC = 10mA, f = 2GHz 8.9 dB Foward transfer gain | S21e |2 80 200 1 Transistor 2SC5474 hFE — IC 14 200 160 Ta=75˚C 120 –25˚C 25˚C 80 40 1 3 10 30 100 Collector current IC (mA) 5 VCE=3V f=1.5GHz Noise figure NF (dB) 4 3 2 1 0.3 1 3 Collector current IC (mA) 2 10 8 6 4 2 10 VCE=3V f=2GHz 8 6 4 2 0 1 3 10 30 Collector current IC (mA) NF — IC 0 0.1 12 0 0.3 10 VCE=3V Forward transfer gain |S21e|2 (dB) Transition frequency fT (GHz) Forward current transfer ratio hFE 240 0 0.1 | S21e |2 — IC fT — IC 100 1 3 10 30 Collector current IC (mA) 100