Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package 15.5±1.0 1.0 4.5±0.3 Features High-power output, high-efficiency : Ie = 3.5 mW/sr (min.) 5.5±0.2 1.0 For optical control systems Not soldered 2.0 max. ø3.6±0.2 ø3.0±0.2 2-0.8 max. 2-0.5±0.1 2 (1.5) Parameter Symbol ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * 2.54 1.6 Absolute Maximum Ratings (Ta = 25˚C) 0.5±0.1 1 Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max 3.5 Unit Cente radiant Intensity Ie IF = 20mA Peak emission wavelength λP IF = 50mA mW/sr Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 15 deg. 940 nm nm 1.5 V 10 µA 1 LN69 Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 10 2 tw = 10µs Ta = 25˚C Ta = 25˚C 20 IF (mA) Pulse forward current 30 10 Forward current 50 40 Allowable forward current IF — VF 80 70 IFP (A) IF (mA) 60 1 10 –1 60 50 40 30 20 10 10 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) ∆Ie — IFP 10 –1 10 –2 10 –1 1.2 10mA 0.8 0.4 0 – 40 1 Pulse forward current IFP (A) λP — Ta 1000 0 40 120 10 2 10 – 20 0 20 40 940 920 60 80 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 Relative radiant intensity (%) Peak emission wavelength λP (nm) 80 IF = 50mA Ambient temperature Ta (˚C ) IF = 50mA 960 1.6 Ambient temperature Ta (˚C ) 100 980 1.2 ∆Ie — Ta 1mA (2) 0.8 10 3 IF = 50mA (1) VF (V) 10 10 –2 10 –3 0.4 VF — Ta (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Forward voltage VF (V) 1.6 Forward voltage Relative radiant intensity ∆Ie 10 2 0 10 2 10 Duty cycle (%) Relative radiant intensity (%) 0 Relative radiant intensity ∆Ie 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm)