Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit: mm ● ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE A shunt resistor is omitted from the driver Allowing supply with the radial taping ■ Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation (TC=25°C) PC 1.5 W Tj Tstg ■ Electrical Characteristics Parameter 3.8±0.2 0.85±0.1 1.0±0.1 150 ˚C –55 to +150 ˚C 0.8C 0.8C 0.7±0.1 0.7±0.1 0.5±0.1 Symbol Storage temperature 0.65±0.1 (TC=25˚C) Parameter Junction temperature 90° 2.5±0.1 ● 4.5±0.2 16.0±1.0 ■ Features 10.8±0.2 7.5±0.2 2.5±0.2 2.5±0.2 0.4±0.1 2.05±0.2 0.8C 1 2 1:Emitter 2:Collector 3:Base MT3 Type Package 3 Internal Connection C B E (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA Collector to base voltage VCBO IC = 100µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 80 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1A 4000 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 1mA 1.8 V Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 1mA 2.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *h FE V 20000 150 MHz Rank classification Rank hFE Q R 4000 to 10000 8000 to 20000 1 Power Transistors 2SD2220 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) Without heat sink 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 IC/IB=1000 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 0.1 0.3 Forward current transfer ratio hFE Collector output capacitance Cob (pF) VCE=10V 30000 25˚C TC=100˚C 3000 –25˚C 1000 300 100 0.01 IE=0 f=1MHz TC=25˚C 20 0.1 0.3 1 3 16 12 8 4 1 3 10 30 IC/IB=1000 10 3 TC=–25˚C 1 25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0.03 Collector current IC (A) 2 3 Cob — VCB 24 10000 1 Collector current IC (A) hFE — IC 100000 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) PC — Ta 2.0 100 Collector to base voltage VCB (V) 3