PANASONIC AN6095SH

ICs for Mobile Communication
AN6095SH
Reception IF + transmission quadrature modulation IC for PHS and
cellular telephone
Unit: mm
24
12
13
6.5±0.3
1
• Operating supply voltage range: 2.7 V to 4.0 V
• Current consumption
Transmission block: 28 mA
Reception block: 5.3 mA
Sleep mode: 10 µA or less
(Transmission block)
• Output level: −8 dBm
• Output frequency: up to 2 GHz
• Transmission IF frequency: 100 MHz to 300 MHz
(Reception block)
• RSSI input D range: 80 dB
• Mixer conversion gain: 16 dB
• Limiter voltage gain: 70 dB
• 2nd down-mixer NF: 6 dB
0.15 +0.1
-0.05
(0.5)
5.5±0.3
7.5±0.3
0.65±0.1
■ Features
1.5±0.2
0.1±0.1
0.65±0.1
0.2±0.1
The AN6095SH is a single chip IC for PHS reception
IF block and transmission block.
Reception IF block is incorporating a 2nd down-mixer
and a limiter/RSSI circuit which can operate for up to
300 MHz of input frequency. Transmission block is incorporating a quadrature modulator, a phase shifter, an
up-mixer for 1.9 GHz and output level control functions.
It contributes to realization of small package and small
size of equipment.
0.5
■ Overview
SSOP024-P-0300A
Note) The package of this product will be changed
to lead-free type (SSOP024-P-0300D). See the
new package dimensions section later of this
datasheet.
■ Applications
• PHS
Io
13
14
15
16
17
18
19
20
21
22
23
24
■ Block Diagram
Io
φ
Σ
RSSI
Publication date: December 2001
SDM00003BEB
12
11
10
9
8
7
6
5
Io
4
3
2
1
Io
1
AN6095SH
■ Pin Descriptions
Pin No.
Symbol
Description
Pin No.
Symbol
Description
1
RXMXIN
RX-mixer-in
13
Q-IN
Q-input
2
RXLOIN
RX-local-in
14
Q-IN
Q-input
3
VCCM
VCC-mixer
15
I-IN
I-input
4
MXO
Mixer-out
16
I-IN
I-input
5
LMDEC1
Limiter-decouple 1
17
GNDM
GND-TX-modulator
6
LMIN
Limiter-in
18
APC/BS
APC/BS
7
LMDEC2
Limiter-decouple 2
19
VCCM
VCC -TX-modulator
8
GNDR
GND-RX
20
TXLO2R
TX-local 2-REF
9
VCCL
VCC -limiter
21
TXLO2
TX-local 2
10
LMO
Limiter-out
22
VCCO
VCC -TX-out
11
TXLO1
TX-local 1-in
23
GNDO
GND-TX-out
12
RSO
RSSI-out
24
TXO
TX-output
■ Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply voltage
VCC
4.2
V
Supply current
ICC
60
mA
Power dissipation
PD
252
mW
Operating ambient temperature *
Topr
−20 to +60
°C
Storage temperature *
Tstg
−55 to +125
°C
Note) 1. *: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
2. For the main characteristics, refer to "■ Technical Data".
■ Recommended Operating Range
Parameter
Supply voltage
2
Symbol
Range
Unit
VCC
2.7 to 4.0
V
SDM00003BEB
AN6095SH
■ Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Current consumption
(reception)
ICCRX
No signal

5.3
6.8
mA
Mixer conversion gain
GMX
VMI = 70 dBµ
Except for filter loss, SW1 = a
13
16
19
dB
Mixer maximum output level
VMX
VMI = 105 dBµ
Except for filter loss, SW1 = a
105
110

dBµ
Limiter voltage gain
GLM
VLI = 20 dBµ, SW1 = b
63
68
73
dB
Limiter maximum output
amplitude
VLM
VLI = 80 dBµ, SW1 = b
300
360

mV[p-p]
RSSI output voltage 1
VS(1)
No signal, SW1 = b
0
0.2
0.5
V
RSSI output voltage 2
VS(2)
VLI = 115 dBµ, SW1 = b
1.60
1.80

V
VS (VIS) = VS(1) + 0.15 V
DS(1) = VS (VIS + 65 dBµ) − VS (VIS)
SW1 = b
1.0
1.25
1.5
V
0.75
1.0
1.25

RSSI output slope
DS
RSSI output slope variation
∆DS(n)
∆DS(n) = 5 {VS (VIS + n13 dBµ) −
VS (VIS + (n−1) 13 dBµ)} /DS(1)
n = 1 to 5, SW1 = b
Current consumption
(transmission)
ICCTX
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V

28
37
mA
Sleep current at transmission
ISL
No signal, VAPC = 0 V

0
10
µA
Transmission output level 1
PO1
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 660 MHz, −10 dBm
VAPC = 2.75 V
−12
−8

dBm
Transmission output level 2
PO2
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 685 MHz, −10 dBm
VAPC = 2.75 V
−12
−8

dBm
Note) 1. Refer to the "• Test circuit" for the SW1.
2. Unless otherwise specified :
At reception, VCC2 = 3.0 V, VLO3 = −10 dBm: f = 233.15 MHz, VMI: f = 243.95 MHz, SW1 = a
VLI: f = 10.8 MHz (Input level of pin 6 except for attenuation of the matching circuit and filter.)
VMO and VLO are in high impedance measurement. (VLM is measured with probe load of 27 pF and 1 MΩ.)
VIS is an input level VLI at which RSSI output voltage becomes VS(1) + 0.15 V.
At transmission, VCC1 = 3.0 V, IQ signal amplitude: 0.4 V (both phases), DC bias: 1.5 V, SW1 = a
ICCTX: π/4 QPSK-modulated, PO1 and PO2: PN9 stages modulated wave
Output frequency of PO1: 1 893.174 MHz
Output frequency of PO2: 1 918.174 MHz
SDM00003BEB
3
AN6095SH
■ Electrical Characteristics at Ta = 25°C (continued)
• Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
1st local leak suppression
amount
CL1
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V

−25

dBc
2nd local leak suppression
amount
CL2
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V

−15

dBc
In-band output level deviation
∆P
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 660 to 1 685 MHz, −10 dBm
VAPC = 2.75 V

±1.6

dB
Adjacent channel leak power
suppression (600 kHz detuning)
BL1
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V

−65
−60
dBc
Modulation precision
EVM
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V

3
5
%[rms]
Minimum output level
Pmin
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 1.0 V

−45
−40
dBm
Image leak suppression
IL1
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm

−35

dBc

−35

dBc

−55
−51
dBc
VAPC = 2.75 V
IQ: Level is of no adjustment
fLO1 + fLO2
local leak suppression amount
CL
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
VAPC = 2.75 V
IQ: DC offset is of no adjustment
Proximity spurious suppression
DU
Lo1 = 233.15 MHz, −10 dBm
Lo2 = 1 672.5 MHz, −10 dBm
Adjust VAPC so as to get PO =
−12 dBm
Note) Unless otherwise specified:
At transmission, VCC1 = 3.0 V, SW1 = a
IQ signal: 0.4 V[p-p] (both phases), DC bias: 1.5 V
CL1, CL2, ∆P, BL1, EVM, Pmin , DU: PN9 stages modulated wave
IL1, CL: π/4 QPSK-modulated
4
SDM00003BEB
AN6095SH
■ Electrical Characteristics (continued)
Q
1 000 pF
I
100 pF
VAPC /BS
5 µF
I
1 000 pF
Q
VCC1
• Test circuit
560 Ω
Lo 2
100 pF
1 000 pF
PO
100 pF
1 kΩ
1 kΩ
1 kΩ
1 kΩ
100 pF
100 pF
100 pF
100 pF
4 700 pF
560 Ω
47 Ω
Io
13
14
15
16
17
18
19
20
21
22
23
24
2 200 pF
Io
φ
Σ
RSSI
1 000 pF
12
10
9
8
7
11
47 Ω
22 nF
560 pF
330 Ω 10.8 MHz
filter
47 Ω
5 µF
SDM00003BEB
Vs
1 000 pF
22 nF
VLM
a
Lo 1
100 pF
VCC2
2 200 pF
2 200 pF
VMO
47 Ω
6
5
4
2 200 pF
100 pF
SW 1
b
VLI
47 Ω
Io
100 pF
Lo 3
VMI
100 pF
3
2
1
Io
5
AN6095SH
■ Technical Data
Unless otherwise specified, the test condition is the same as "■ Electrical Characteristics".
Characteristics are the theoretical values and not guaranteed ones.
IM/mixer output  Mixer input
0
130
−10
120
110
−20
IM/mixer output level (dBµ)
Transmission output spurious level (dBm)
• Main characteristics (application circuit)
Wide band spurious characteristic
−30
−40
−50
−60
−70
−80
100
Mixer output
90
80
IM output
70
60
50
40
30
20
−90
10
−100
0
0
6G
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Frequency (Hz)
Mixer input level (dBµ)
Mixer CG, NF characteristics  Local input
Limiter input/output characteristic
20
120
18
110
Limiter output level (dBµ)
CG
16
Mixer CG (dB)
NF (dB)
14
12
10
8
6
NF
100
90
80
70
4
60
2
0
−20 −18 −16 −14 −12 −10 −8 −6 −4 −2
50
−10 0
0
Local input level (dBm)
10 20 30 40 50 60 70 80 90 100 110 120
Mixer input level (dBµ)
RSSI characteristic
Mixer inpit/output characteristics
120
1.8
110
1.6
100
Mixer output level (dBµ)
RSSI output level (V)
1.4
1.2
1.0
0.8
0.6
0.4
Ta = 25°C, 60°C
90
80
Ta = −20°C
70
60
50
40
30
20
0.2
0.0
−10 0
10
0
0
10 20 30 40 50 60 70 80 90 100 110
6
10 20 30 40 50 60 70 80 90 100 110 120 130
Mixer input level (dBµ)
Mixer input level (dBµ)
SDM00003BEB
AN6095SH
■ Technical Data (continued)
• Main characteristics (application circuit) (continued)
Limiter characteristics
RSSI characteristics
2.2
110
Ta = 60°C
2.0
100
Ta = −20°C
1.8
Ta = 25°C
1.6
RSSI output level (V)
90
80
70
60
50
40
1.4
Ta = −20°C
1.2
Ta = 25°C
Ta = 60°C
1.0
0.8
30
0.6
20
0.4
10
0.2
0.0
0
10 20 30 40 50 60 70 80 90 100 110 120
0
10 20 30 40 50 60 70 80 90 100 110 120
Limiter input level (dBµ)
Limiter input level (dBµ)
APC control voltage characteristics
0
20
−10
Output level
−20
Ta = 60°C
15
−30
−40
Ta = 25°C
8fLO1
Ta = −20°C
−50
Ta = −20°C
−60
Ta = −20°C
ACP 600 kHz
−70
60°C
25°C
60°C
10
EVM (%[rms])
0
Output level (dBm)
8fLO1 , adjacent channel leak (600 kHz) (dBc)
Limiter output level (dBµ)
120
25°C
5
−80
Ta = −20°C
EVM
−90
60°C
25°C
−100
0
0
1
2
3
APC control voltage (V)
VCC = 3.0 V
Lo1: 233.15 MHz, −10 dBm
Lo2: 1 672.5 MHz, −10 dBm
IQ: 0.4 V[p-p] (double phase), 1.5 VDC ,
using PN9 stages continuous wave
SDM00003BEB
7
AN6095SH
Q
1 000 pF
I
100 pF
VAPC /BS
5 µF
I
1 000 pF
Q
VCC1
■ Application Circuit Example
Lo 2
560 Ω
470 pF
PO
1 pF
100 pF
100 pF
560 Ω
47 Ω
1.8 nH
1 kΩ
1 kΩ
1 kΩ
1 kΩ
100 pF
100 pF
100 pF
100 pF
4 700 pF
IO
13
14
15
16
17
18
19
20
21
22
23
24
2 200 pF
IO
φ
Σ
RSSI
100 pF
2 200 pF
2 200 pF
8
10.8 MHz
filter
1 000 pF
4
270 Ω
22 nF
SDM00003BEB
5 µF
VCC2
12
560 pF
Vs
Lo 1
VLM
Lo 3
1 000 pF
22 nF
VMO
VMI
47 Ω
At CG/NF measurement,
set pin 4 output as the
right figure.
47 Ω
100 pF
47 nH
4 pF 1 pF
11
22 nF
1 000 pF 100 pF
120 nH
10
9
8
7
6
5
IO
4
3
2
1
IO
AN6095SH
■ New Package Dimensions (Unit: mm)
• SSOP024-P-0300D (Lead-free package)
6.50±0.30
24
13
+0.10
0.15-0.05
5.50±0.30
7.50±0.30
(1.00)
0° to 10°
(0.50)
0.50
Seating plane
12
0.20+0.10
-0.05
0.10±0.10
1
1.50±0.20
(0.50)
SDM00003BEB
Seating plane
9
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and semiconductors described in this material
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2001 MAR