Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification ■ Features Unit: mm Parameter Symbol Collector to 2SB954 base voltage 2SB954A Collector to 2SB954 Ratings –60 V –80 Emitter to base voltage VEBO –5 V Peak collector current ICP –2 A IC Collector current Collector power TC=25°C dissipation –1 Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB954 current 2SB954A Collector cutoff 2SB954 current 2SB954A ICEO ICES IEBO Emitter cutoff current Collector to emitter 2SB954 voltage 2SB954A Forward current transfer ratio Conditions 4.2±0.2 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ max VCE = –30V, IB = 0 –300 –300 VCE = –60V, VBE = 0 –200 VCE = –80V, VBE = 0 –200 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = – 0.2A 70 15 hFE2 VCE = –4V, IC = –1A VCE(sat) IC = –1A, IB = – 0.125A Base to emitter voltage VBE VCE = –4V, IC = –1A Transition frequency fT VCE = –5V, IC = – 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 0.5 +0.2 –0.1 VCE = –60V, IB = 0 Collector to emitter saturation voltage *h 0.8±0.1 1.3±0.2 (TC=25˚C) Parameter Collector cutoff 1.4±0.1 W 2 ■ Electrical Characteristics φ3.1±0.1 A 30 PC Ta=25°C 7.5±0.2 16.7±0.3 V –80 VCEO emitter voltage 2SB954A 2.7±0.2 Unit –60 VCBO 4.2±0.2 5.5±0.2 4.0 ■ Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 ● 10.0±0.2 Solder Dip ● 0.7±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw ● IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V Unit µA µA mA V –80 250 –1 –1.3 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SB954, 2SB954A PC — Ta IC — VCE 30 (1) 20 10 TC=25˚C –30mA –2.0 –25mA –1.5 –20mA –10mA –1.0 –8mA –6mA –4mA – 0.5 (2) –6 25˚C TC=100˚C –25˚C –4 –2 (4) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 –5 25˚C – 0.3 TC=100˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 3000 300 100 1000 TC=100˚C 25˚C –25˚C 10 3 –1 –3 Area of safe operation (ASO) ICP t=10ms IC DC – 0.1 – 0.03 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C –3 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 –10 – 0.01 –1 100 Collector current IC (A) –100 – 0.3 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –2.0 VCE=–5V f=10MHz TC=25˚C 3000 30 Collector current IC (A) –30 –1.6 fT — IC Transition frequency fT (MHz) –1 –1.2 10000 1000 –3 – 0.8 VCE=–4V Forward current transfer ratio hFE –10 – 0.1 – 0.4 Base to emitter voltage VBE (V) hFE — IC IC/IB=10 –1 0 10000 –30 –3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 Collector current IC (A) –8 –2mA (3) 0 2 VCE=–4V Collector current IC (A) 40 –10 IB=–40mA (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –2.5 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10