PANASONIC 2SC5145

Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
●
1.5±0.1
10.0±0.3
1.0±0.1
1.5max.
1.1max.
2.0
●
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
●
Unit: mm
6.0±0.5
■ Features
●
3.4±0.3
8.5±0.2
For high breakdown voltage high-speed switching
0.8±0.1
0.5max.
2.54±0.3
(TC=25˚C)
1
V
VCEO
500
V
Emitter to base voltage
VEBO
8
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Base current
IB
3
A
Collector to emitter voltage
Collector power TC=25°C
Ta=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
6.0±0.3
1.0±0.1
R0.5
R0.5
0.8±0.1
0 to 0.4
1.1 max.
W
1.3
■ Electrical Characteristics
3.4±0.3
2.54±0.3
40
PC
Unit: mm
8.5±0.2
150
˚C
–55 to +150
˚C
14.7±0.5
V
800
+0.4
800
VCES
3.0–0.2
VCBO
4.4±0.5
Collector to base voltage
+0
Unit
1.5–0.4
Ratings
1:Base
2:Collector
3:Emitter
N Type Package
3
10.0±0.3
Symbol
2
2.0
Parameter
4.4±0.5
■ Absolute Maximum Ratings
5.08±0.5
5.08±0.5
1
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 800V, IE = 0
100
µA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
100
µA
Collector to emitter voltage
VCEO(sus)
Forward current transfer ratio
*
IC = 0.2A, L = 25mH
500
hFE1
VCE = 5V, IC = 0.1A
15
8
hFE2
VCE = 5V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.6A
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.6A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
*V
CEO(sus)
Test circuit
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
50/60Hz
mercury relay
V
1
1.5
8
V
V
MHz
1
µs
3
µs
1
µs
X
L 25mH
Y
120Ω
6V
1Ω
15V
G
1
Power Transistors
2SC5145
PC — Ta
IC — VCE
(1)
40
30
20
TC=25˚C
7
IB=1200mA
6
1000mA
800mA
5
600mA
4
400mA
300mA
3
200mA
150mA
2
100mA
50mA
20mA
10
1
(2)
(3)
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
8
10
TC=–25˚C
100˚C
0.3
0.1
0.03
0.3
1
TC=100˚C
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
3
0.1
0.3
1
10
fT — IC
300
100
TC=100˚C
25˚C
30
–25˚C
10
3
1
0.3
VCE=10V
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.3
0.1
0.01 0.03
10
3
Collector current IC (A)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
3
0.1
25˚C
3
VCE=5V
10
0.01
0.01 0.03
10
1000
IC/IB=5
30
1
IC/IB=5
30
hFE — IC
1000
25˚C
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
Base to emitter saturation voltage VBE(sat) (V)
6
Collector current IC (A)
0.1
0.3
1
3
0.1
0.01 0.03
10
Collector current IC (A)
Cob — VCB
0.1
0.3
1
3
10
Collector current IC (A)
ton, tstg, tf — IC
Area of safe operation (ASO)
100
10000
IE=0
f=1MHz
TC=25˚C
1000
300
100
30
10
10
0.1
10
30
100
3
t=0.5ms
IC
1ms
10ms
1
DC
0.3
0.1
0.03
0.01
0.01
3
tf
0.3
1
0.1
1
ICP
ton
1
0.03
Collector to base voltage VCB (V)
10
tstg
3
3
0.3
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(IB1=–IB2)
VCC=200V
TC=25˚C
30
Switching time ton,tstg,tf (µs)
3000
Collector current IC (A)
0
Collector output capacitance Cob (pF)
Collector to emitter saturation voltage VCE(sat) (V)
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
0
2
VCE(sat) — IC
8
Collector current IC (A)
Collector power dissipation PC (W)
50
Non repetitive pulse
0.003 T =25˚C
C
0
1
2
3
4
5
6
7
Collector current IC (A)
8
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SC5145
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
Lcoil=50µH
IC/IB=5
(IB1=–IB2)
TC=100˚C
Collector current IC (A)
7
L coil
6
IB1
5
T.U.T
–IB2
Vin
4
IC
VCC
3
2
Vclamp
tW
1
0
0
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3