Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SC5127 base voltage 2SC5127A Collector to 2SC5127 emitter voltage 2SC5127A Ratings Unit 800 VCBO 800 V 900 Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 3.0 A Collector current IC 1.5 A Base current IB 0.5 A Collector power TC=25°C dissipation Ta=25°C 25 PC Junction temperature Tj Storage temperature Tstg 2SC5127 current 2SC5127A 3.0±0.2 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Collector cutoff Symbol ICBO Conditions min typ max VCB = 800V, IE = 0 100 VCB = 900V, IE = 0 100 100 Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 0.6A 8 Collector to emitter saturation voltage VCE(sat) IC = 0.6A, IB = 0.17A Base to emitter saturation voltage VBE(sat) IC = 0.6A, IB = 0.17A Transition frequency fT VCE = 10V, IC = 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio 0.7±0.1 W 2 ■ Electrical Characteristics 2.6±0.1 1.2±0.15 1.45±0.15 V 900 VCES 15.0±0.3 ● 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● 4.6±0.2 9.9±0.3 IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V Unit µA µA V 1.0 1.5 20 V V MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5127/2SC5127A IC — VCE (1) 1.0 20 (2) 10 100mA 80mA 0.8 60mA 0.6 40mA 0.4 20mA 10mA 0.2 (3) (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 3 TC=–25˚C 1 25˚C 0.3 0.3 12 1 3 300 100 TC=100˚C 30 25˚C 10 –25˚C 3 1 0.01 0.03 10 fT — IC 0.3 1 3 TC=100˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 Switching time ton,tstg,tf (µs) 3 1 0.3 Collector current IC (A) 1 3 10 100 30 10 3 1 3 10 Non repetitive pulse TC=25˚C 3 3 ton tstg 100 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=–IB2) VCC=200V TC=25˚C 10 30 Collector to base voltage VCB (V) 1 0.3 tf 0.1 t=0.5ms 1 1ms 0.3 10ms 0.1 DC 0.03 0.01 0.003 0.001 0.01 0.3 1 IE=0 f=1MHz TC=25˚C 10 30 10 0.3 300 10 0.03 2 25˚C 0.3 1 0.1 ton, tstg, tf — IC VCE=10V f=1MHz TC=25˚C 0.1 1 1000 100 0.03 3 Collector current IC (A) Collector current IC (A) 100 0.1 0.01 10 Cob — VCB VCE=5V Collector current IC (A) 30 IC/IB=5 30 hFE — IC 30 0.1 10 1000 IC/IB=5 0.1 0.01 0.03 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 100˚C 6 Collector current IC (A) 0 Collector output capacitance Cob (pF) 30 TC=25˚C IB=150mA Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Transition frequency fT (MHz) VCE(sat) — IC 1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 0 0.5 1.0 1.5 Collector current IC (A) 2.0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5127/2SC5127A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 4.0 Lcoil=180µH IC/IB=5 (IB1=–IB2) TC<100˚C Collector current IC (A) 3.5 L coil 3.0 IB1 2.5 T.U.T –IB2 Vin 2.0 IC VCC 1.5 1.0 Vclamp tW 0.5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3