Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A Unit: mm ■ Absolute Maximum Ratings Parameter Collector to base voltage 2SB948A Collector to 2SB948 Ratings –40 VCBO –50 –20 VCEO emitter voltage 2SB948A 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 (TC=25˚C) Symbol 2SB948 2.7±0.2 –40 Unit V 4.0 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 1.4±0.1 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 V 5.08±0.5 Emitter to base voltage VEBO –5 V Peak collector current ICP –20 A Collector current IC –10 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Parameter Symbol Conditions ICBO VCB = –40V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 2SB948 voltage 2SB948A Forward current transfer ratio 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Collector cutoff current Collector to emitter 2 W 2 ■ Electrical Characteristics 1 min IC = –10mA, IB = 0 hFE1 VCE = –2V, IC = – 0.1A 45 VCE = –2V, IC = –3A 90 hFE2 max Unit –50 µA –50 µA –20 VCEO * typ V –40 260 Collector to emitter saturation voltage VCE(sat) IC = –10A, IB = – 0.33A Base to emitter saturation voltage VBE(sat) IC = –10A, IB = – 0.33A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 100 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 400 pF Turn-on time ton 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs *h FE2 IC = –3A, IB1 = – 0.1A, IB2 = 0.1A – 0.6 –1.5 V V Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SB948, 2SB948A IC — VCE 30 (1) 20 10 –10 –60mA –50mA –8 –40mA –35mA –6 –25mA –4 –20mA –15mA –10mA (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –12 100˚C 25˚C – 0.03 – 0.3 –1 –3 300 25˚C TC=100˚C 100 –25˚C 30 10 3 300 100 30 10 3 Cob — VCB –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 ton, tstg, tf — IC 100 30 10 Switching time ton,tstg,tf (µs) 300 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C 3 1 –30 tstg 0.3 ton Non repetitive pulse TC=25˚C ICP t=1ms –10 IC 10ms –3 DC –1 – 0.3 0.1 tf – 0.1 0.03 0.01 –10 –30 –100 Collector to base voltage VCB (V) –10 Area of safe operation (ASO) – 0.03 –3 –3 –100 3 –1 –1 Collector current IC (A) 10 1000 1 – 0.1 – 0.3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 10000 –10 1000 1 – 0.1 – 0.3 –10 IE=0 f=1MHz TC=25˚C –3 3000 Collector current IC (A) 3000 –1 VCE=–2V 3000 Collector current IC (A) – 0.01 – 0.1 – 0.3 Collector current IC (A) fT — IC 1000 TC=–25˚C –1 – 0.01 – 0.1 10000 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 – 0.1 Collector output capacitance Cob (pF) –10 –25˚C hFE — IC IC/IB=30 – 0.3 2 –8 TC=100˚C 25˚C Collector to emitter voltage VCE (V) VBE(sat) — IC –10 –6 –1 – 0.03 Transition frequency fT (MHz) 0 –3 – 0.1 –5mA 0 IC/IB=30 – 0.3 –30mA –2 (2) (3) –80mA 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 – 0.1 – 0.3 2SB948A 40 TC=25˚C IB=–100mA –10 2SB948 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC –12 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Power Transistors 2SB948, 2SB948A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3