Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 20 V VEBO 25 V IC 300 mA Peak collector current ICP 500 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Parameter 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: EN Internal Connection 6 Tr1 1 2 5 4 ■ Electrical Characteristics 1.45±0.1 +0.1 4 0.1 to 0.3 *1 0.5 –0.05 0.95 2 0.16–0.06 2SD1915(F) × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max 20 Unit Collector to emitter voltage VCEO IC = 1mA, IB = 0 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 25V, IC = 0 0.1 µA Forward current transfer ratio hFE VCE = 2V, IC = 4mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA 500 2500 0.1 V Base to emitter voltage VBE VCE = 2V, IC = 4mA 0.6 V Transition frequency fT VCB = 6V, IE = –4mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*1 7 1.0 pF Ω Ron test circuit 1kΩ IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Composite Transistors XN4506 PT — Ta IC — VCE 500 IC — VBE 120 24 VCE=2V 200 100 0 IB=10µA 16 8µA 12 6µA 8 4µA 4 2µA 80 120 160 Ambient temperature Ta (˚C) 2 Ta=75˚C 25˚C –25˚C 10 100 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz Ta=25˚C 16 12 8 4 0 10 10 0 12 0.2 100 Collector to base voltage VCB (V) 0.4 0.6 1600 Ta=75˚C 25˚C –25˚C 800 400 1 1.0 fT — I E 1200 0 0.1 0.8 Base to emitter voltage VBE (V) 200 10 Collector current IC (mA) Cob — VCB 1 8 VCB=6V Ta=25˚C VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 0.1 20 6 hFE — IC 1 1 4 2000 IC/IB=10 0.001 0.1 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.01 –25˚C 60 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 80 20 0 0 2 Collector current IC (mA) 300 25˚C 100 20 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 160 120 80 40 0 –0.1 –1 –10 Emitter current IE (mA) –100