Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm ● 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings Parameter * 2 1 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO Collector to emitter voltage VCEO +25 60–10 +25 60–10 Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion marking V V 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1T Internal Connection C or more, and the board B E ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 2 mA Collector to base voltage VCBO IC = 100µA, IE = 0 50 85 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 85 V 6500 40000 Forward current transfer ratio hFE VCE = 10V, IC = 1.0A* 1.0mA* 1.8 2.2 Collector to emitter saturation voltage VCE(sat) IC = 1.0A, IB = Base to emitter saturation voltage VBE(sat) IC = 1.0A, IB = 1.0mA* Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 150 V V MHz *2 Pulse measurement 1 2SD2416 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 1000 VCE=10V Ta=25˚C 2.0 1.6 1.2 IB=100µA 90µA 80µA 70µA 60µA 50µA 0.8 40µA 0.4 0.2 0 30µA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 100 30 10 25˚C Ta=–25˚C 100˚C 0.3 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 2 10 12 300 100 30 10 3 25˚C –25˚C 0.3 0.1 0.01 0.03 0.1 10 24 105 Ta=100˚C 25˚C –25˚C 103 102 0.01 0.03 0.3 1 3 1 Collector current IC (A) Cob — VCB VCE=10V 104 Ta=100˚C 1 hFE — IC 300 1 8 106 IC/IB=1000 3 6 IC/IB=1000 Collector to emitter voltage VCE (V) VBE(sat) — IC 1000 4 Collector output capacitance Cob (pF) 0 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 VCE(sat) — IC 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.4 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V)