Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features Good radiant power output linearity with respect to input current 12.5 min. 10.0 min. Suited for use in high-speed modulation 2.8 1.8 1.0 High-power output, high-efficiency : PO = 5.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 4.2±0.3 2.3 1.9 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 1.2 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 160 mW Forward current (DC) IF 100 mA 1.5 A 3 V * Pulse forward current IFP Reverse voltage (DC) VR Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1 2 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ 4.3 5.5 max Unit PO IF = 100mA mW Peak emission wavelength λP IF = 100mA 950 nm Spectral half band width ∆λ IF = 100mA 50 nm Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 35 deg. 1.6 V 10 µA 1 LN65 Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle IF — VF 120 120 Ta = 25˚C 60 40 20 0 – 25 0 20 40 60 80 100 10 IF (mA) 80 1 10 –1 10 –1 IFP — VF tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 0 10 2 10 0 0.4 0.8 1.2 ∆PO — IF ∆PO — IFP 1 Relative radiant power ∆PO 10 80 60 40 1 2 3 4 0 5 10 2 (1) 10 (2) (3) 1 (4) 10 –1 20 0 0 Forward voltage VF (V) 20 40 60 80 100 10 –2 120 1 Forward current IF (mA) 10 10 2 1000 0.8 0.4 0 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 IF = 100mA Peak emission wavelength λP (nm) VF (V) Forward voltage 50mA Relative radiant power ∆PO IF = 100mA IF = 100mA 10 2 10 1 – 40 10 4 λP — Ta 10 3 1.2 10 3 Pulse forward current IFP (mA) ∆PO — Ta VF — Ta 1.6 2.0 tw = 10µs (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz Ta = 25˚C 10 3 100 10 2 1.6 Forward voltage VF (V) Ta = 25˚C Relative radiant power ∆PO IFP (mA) Pulse forward current 1 Duty cycle (%) 120 10 3 10 –1 40 20 Ambient temperature Ta (˚C ) 10 4 80 60 10 –2 10 –3 10 –2 100 Ta = 25˚C Forward current IFP (A) 100 Pulse forward current Allowable forward current IF (mA) 10 2 0 40 80 Ambient temperature Ta (˚C ) 120 980 960 940 920 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 120 Infrared Light Emitting Diodes Directivity characteristics 0˚ IF = 100mA Ta = 25˚C Relative radiant intensity (%) 90 80 80 70 60 60 50 40 40 30 20 20 10˚ Frequency characteristics 20˚ 10 2 Ta = 25˚C 100 Relative radiant intensity(%) 100 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output Spectral characteristics LN65 1 10 –1 80˚ 90˚ 0 860 900 940 980 Wavelength 1020 1060 1100 λ (nm) 10 –2 10 10 2 10 3 10 4 Frequency f (kHz) 3