APTGF150A60T3AG Phase leg NPT IGBT Power Module Power Module 29 30 31 32 VCES = 600V IC = 150A @ Tc = 100°C Application 13 • • • • 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27 28 22 23 25 R1 • 8 7 16 28 27 26 25 18 19 20 14 • • • • • 20 19 18 23 22 29 16 30 15 31 14 32 Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 13 2 3 4 7 8 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together • • • • • Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 230 150 400 ±20 833 400A @ 480V Unit V July, 2008 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGF150A60T3AG – Rev 0 Symbol VCES APTGF150A60T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Typ 4.5 2 2.2 5.5 Min Typ Max Unit 250 2.5 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Cres Input Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=200A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 200A Tj = 125°C RG = 1.5Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 9 0.8 nF 480 nC 25 10 130 ns 20 25 11 150 ns 30 2 mJ 6 900 A Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C 35 600 Tj = 125°C 120 1.7 2 1.4 Tj = 25°C 70 Tj = 125°C Tj = 25°C 140 200 Tj = 125°C 1380 Tc = 100°C Unit µA A 2.3 V July, 2008 VRRM Test Conditions ns nC 2–5 APTGF150A60T3AG – Rev 0 Symbol Characteristic APTGF150A60T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 Max 0.15 0.36 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGF150A60T3AG – Rev 0 28 17 1 July, 2008 SP3 Package outline (dimensions in mm) APTGF150A60T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 400 300 250 IC (A) IC (A) 300 TJ=125°C 200 VGE=15V VGE=20V 100 200 100 TJ=125°C 50 VGE=9V 50 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 300 3 VCE (V) VCE = 300V VGE = 15V RG = 1.5 Ω TJ = 125°C 9 E (mJ) 250 200 150 TJ=125°C 100 2 4 5 12 TJ=25°C 350 1 Energy losses vs Collector Current Transfert Characteristics 400 Eoff 6 3 50 TJ=25°C Eon 0 0 5 6 7 8 9 10 11 0 12 100 200 Switching Energy Losses vs Gate Resistance 400 Reverse Bias Safe Operating Area 10 500 VCE = 300V VGE =15V IC = 200A TJ = 125°C 400 Eoff IC (A) 7.5 300 IC (A) VGE (V) E (mJ) VGE=12V 250 150 150 IC (A) TJ = 125°C 350 TJ=25°C 350 5 Eon 2.5 300 200 VGE=15V TJ=125°C RG=1.5 Ω 100 0 0 0 2 4 6 8 Gate Resistance (ohms) 0 10 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.08 0.04 IGBT 0.7 July, 2008 0.12 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGF150A60T3AG – Rev 0 Thermal Impedance (°C/W) 0.16 Operating Frequency vs Collector Current 240 200 160 ZCS Forward Characteristic of diode 400 VCE=300V D=50% RG=1.5 Ω TJ=125°C TC=75°C 350 300 TJ=125°C 250 IF (A) Fmax, Operating Frequency (kHz) APTGF150A60T3AG 120 200 150 80 100 ZVS hard switching 40 TJ=25°C 50 0 0 0 50 100 150 200 250 0 300 0.5 IC (A) 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.9 0.3 0.2 Diode 0.7 0.5 0.3 0.1 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGF150A60T3AG – Rev 0 July, 2008 rectangular Pulse Duration (Seconds)