APTGL90DDA120T3G Dual Boost chopper Trench + Field Stop IGBT4 Power module VCES = 1200V IC = 90A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Q1 Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Absolute maximum ratings ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 110 90 150 ±20 385 150A @ 1150V Unit V April, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL90DDA120T3G – Rev 0 Symbol VCES APTGL90DDA120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 75A Tj = 150°C VGE = VCE, IC = 3 mA VGE = 20 V, VCE = 0V Min Typ 5 1.85 2.25 5.8 Test Conditions Min Typ Max 250 2.25 Unit µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=75A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2Ω TJ = 25°C VGE = ±15V VBus = 600V TJ = 150°C IC = 75A TJ = 25°C RG = 2.2Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 4.4 0.29 0.24 nF 0.57 µC 130 20 300 ns 45 150 35 ns 350 80 3.3 8.5 4.2 7.2 mJ 300 A mJ Chopper diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A IF = 150A IF = 100A IF = 100A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C 100 2.4 2.7 1.8 Tj = 25°C 385 Tj = 125°C Tj = 25°C Tj = 125°C 480 1055 5240 www.microsemi.com Max Unit V µA A 3 V April, 2009 IRM Test Conditions ns nC 2-5 APTGL90DDA120T3G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGL90DDA120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.39 0.55 Unit °C/W V 175 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGL90DDA120T3G – Rev 0 April, 2009 28 17 1 APTGL90DDA120T3G Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 100 VGE=19V 100 TJ=150°C 75 VGE=15V 75 50 50 25 25 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 150 20 E (mJ) 75 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 150°C 25 100 1 3 4 Energy losses vs Collector Current 30 TJ=25°C 125 IC (A) TJ = 150°C 125 TJ=25°C IC (A) IC (A) 125 Eon 15 10 50 TJ=150°C 25 5 0 0 5 6 7 8 9 10 11 12 Eoff 0 13 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 160 Eon 120 VCE = 600V VGE =15V IC = 75A TJ = 150°C 12 IC (A) E (mJ) 16 Eoff 8 80 VGE=15V TJ=150°C RG=2.2 Ω 40 4 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.2 0.15 0.1 0.05 0.9 IGBT 0.7 0.5 April, 2009 0.35 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL90DDA120T3G – Rev 0 Thermal Impedance (°C/W) 0.4 APTGL90DDA120T3G Forward Characteristic of diode 200 VCE=600V D=50% RG=2.2 Ω TJ=150°C Tc=75°C 100 80 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 ZCS 20 Hard switching ZVS 175 125 100 40 75 TJ=25°C 50 25 0 0 20 TJ=125°C 150 60 80 100 0 120 0.5 1 1.5 2 2.5 3 VF, Anode to Cathode Voltage (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.4 0.3 0.9 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL90DDA120T3G – Rev 0 April, 2009 Rectangular Pulse Duration in Seconds