APT33N90JCU2 ISOTOP® Boost chopper VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET Power Module K D Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • G • • • S K S G D ISOTOP® - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 33 25 75 ±20 120 290 8.8 2.9 1940 Unit V A V mΩ W A August, 2009 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APT33N90JCU2 – Rev 0 Symbol VDSS APT33N90JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6.8 0.33 nF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5Ω 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5Ω 1.5 mJ 0.75 2.1 mJ 0.85 Chopper diode ratings and characteristics IF VF trr Qrr Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt=200A/µs www.microsemi.com Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C 380 Tj = 25°C 360 Tj = 125°C 1700 Unit V µA A 3.1 V ns August, 2009 IRM Test Conditions nC 2–5 APT33N90JCU2 – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT33N90JCU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ CoolMOS Diode 2500 -40 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Max 0.43 1.05 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Drain Cathode 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical CoolMOS performance Curve 150 ZCS 100 50 Hard switching 0 10 12.5 15 17.5 20 22.5 25 2.5 2.0 1.5 1.0 0.5 25 100 125 150 4 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5Ω TJ=125°C L=100µH 3 75 Switching Energy vs Gate Resistance Switching Energy vs Current 4 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eon 2 Eoff 1 0 August, 2009 ZVS 200 ON resistance vs Temperature 3.0 Eon 3 Eoff 2 VDS=600V ID=26A TJ=125°C L=100µH 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) www.microsemi.com 3–5 APT33N90JCU2 – Rev 0 Frequency (kHz) VDS=600V D=50% RG=7.5Ω TJ=125°C TC=75°C RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 250 APT33N90JCU2 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 100 µs 10 ms ID, DC Drain Current (A) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C TC=25°C 950 925 900 25 75 100 125 30 25 20 15 10 5 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) 1000 Coss 100 10 Crss 1 0 150 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=26A TJ=25°C 8 6 August, 2009 Ciss 10000 50 75 100 125 TC, Case Temperature (°C) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 DC Drain Current vs Case Temperature 35 Maximum Safe Operating Area 10 975 TJ, Junction Temperature (°C) 1000 100 1000 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 4–5 APT33N90JCU2 – Rev 0 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APT33N90JCU2 Typical Chopper diode performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 500 trr, Reverse Recovery Time (ns) 3.0 TJ=125°C VR=800V 400 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 30 A 2 15 A 1 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 800 1000 1200 30 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 Max. Average Forward Current vs. Case Temp. 50 160 Duty Cycle = 0.5 TJ=175°C 40 IF(AV) (A) 120 80 30 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 August, 2009 C, Capacitance (pF) 45 A 3 0 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 175 Case Temperature (ºC) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APT33N90JCU2 – Rev 0 IF, Forward Current (A) 80