IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol Formerly developmental type TA17512. D Ordering Information PART NUMBER IRFF9230 PACKAGE TO-205AF G BRAND IRFF9230 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-114 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9230 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL IRFF9230 -200 -200 -4.0 -16 ±20 25 0.2 500 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS -200 - - V Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure 10) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA - - -250 µA -4.0 - - A Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time ID(ON) IGSS rDS(ON) gfs td(ON) tr Turn-Off Delay Time td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs VDS > ID(ON) x rDS(ON)MAX, VGS = -10V VGS = ±20V - - ±100 nA ID = -2.0A, VGS = -10V, (Figures 8, 9) - 0.5 0.800 Ω VDS > ID(ON) x rDS(ON)MAX, ID = -2.0A, (Figure 12) 2.2 3.5 - S VDD = 0.5BVDSS, ID ≈ -4.0A, RG = 9.1Ω, RL = 2.5Ω for BVDSS = -200V RL = 18.7Ω for BVDSS = -150V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 30 50 ns - 50 100 ns - 50 100 ns - 40 80 ns VGS = -10V, ID = -4.0A, VDS = 0.8 x Rated BVDSS, IG(REF) = -1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 31 45 nC - 18 - nC - 13 - nC VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 550 - pF Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 170 - pF Reverse Transfer Capacitance CRSS - 50 - pF - 5.0 - nH - 15 - nH - - 5.0 oC/W - - 175 oC/W Internal Drain Inductance LD Internal Source Inductance LS Measured From the Drain Lead, 5mm (0.2in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Measured From the Source Inductances D Lead, 5mm (0.2in) From Header to Source Bonding LD Pad G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-115 Typical Socket Mount IRFF9230 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier ISM MIN TYP MAX - - -4.0 UNITS A - - -16 A - - -1.5 V - 400 - ns - 2.6 - µC D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time TC = 25oC, ISD = -4.0A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs VSD trr Reverse Recovery Charge QRR NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 46.9mH, RG = 25Ω, peak IAS = 4.0A (Figures 15, 16). Typical Performance Curves Unless Otherwise Specified -5 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 -3 -2 -1 150 25 75 50 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED -4 0 0 TRANSIENT THERMAL IMPEDANCE POWER DISSIPATION MULTIPLIER 1.2 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 0.02 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE 4-116 1 10 IRFF9230 Typical Performance Curves Unless Otherwise Specified (Continued) -100 -15 VGS = -10V -10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10µs 100µs 1ms -1 10ms 100ms TC = 25oC TJ = MAX RATED -0.1 -1 VGS = -8V -12 VGS = -7V -9 80µs PULSE TEST VGS = -6V -6 VGS = -5V -3 VGS = -4V DC SINGLE PULSE -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 -1000 0 -10 ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -10V -9V -8V -9 -7V -6 -6V -3 -5V -4V -8 -4 -6 -2 VDS, DRAIN TO SOURCE VOLTAGE (V) -12 TJ = 125oC TJ = 25oC -9 TJ = -55oC -6 -3 0 -10 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 VGS = -10V, ID = -2A NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 2µs 1.6 ON RESISTANCE (Ω) -10 FIGURE 7. TRANSFER CHARACTERISTICS 2.0 rDS(ON), DRAIN TO SOURCE -50 PULSE DURATION = 80µs VDS ≥ I D(ON) x rDS(ON) MAX FIGURE 6. SATURATION CHARACTERISTICS 1.2 VGS = - 10V 0.8 VGS = - 20V 0.4 0 -40 -15 PULSE DURATION = 80µs 0 -30 FIGURE 5. OUTPUT CHARACTERISTICS -15 -12 -20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 0 VGS = -9V 0 -5 -10 -15 -20 -25 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-117 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFF9230 Typical Performance Curves NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 Unless Otherwise Specified (Continued) 2000 ID = -250µA C, CAPACITANCE (pF) 1.15 1.05 0.95 0.85 0.75 -40 0 40 80 120 VGS = 0V, f = 1MHz CISS = CGS + CGD 1600 CRSS = CGD COSS ≈ CDS + CGD 1200 800 CISS 400 COSS 0 160 -10 0 TJ , JUNCTION TEMPERATURE (oC) -30 -40 -50 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 7.0 -100 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80µs 5.6 TJ = -55oC TJ = 25oC 4.2 TJ = 125oC 2.8 1.4 0 -3 -6 -9 -12 -15 -10 TJ = 150oC TJ = 25oC -1.0 -0.1 -0.4 -0.6 ID , DRAIN CURRENT (A) -0.8 ID = -4A -5 -10 VDS = -160V VDS = -100V VDS = -40V -15 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC) 40 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-118 -1.2 -1.4 -1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 0 -1.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE (V) gfs, TRANSCONDUCTANCE (S) -20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 0 CRSS -1.8 IRFF9230 Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - RG REQUIRED PEAK IAS + VDD DUT 0V VDD tP VGS IAS IAS VDS tP 0.01Ω BVDSS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL - DUT VGS + 10% 10% VDS VDD RG tf VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-119 0 IG(REF) FIGURE 20. GATE CHARGE WAVEFORMS IRFF9230 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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