PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V ● ● ● ● ● ● IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Combines low conduction losses with high switching speed Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Good coplanarity Easy solder inspection and cleaning VCE(ON)typ = 2.79V G @VGE = 15V, IC = 29A E(k) E Benefits ● ● ● ● Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics High input impedance requires low gate drive power Less noise and interference SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 54 29 108 108 16 108 10 ± 20 210 83 -55 to +150 V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. Typ. Max. — — — — — — 0.44 6.0(0.21) 0.60 1.20 — — Units °C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. Notes: ➀ Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) ➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%. ➃ Pulse width 5.0µs, single shot. ➁ VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19) 1 www.irf.com IRG4ZH50KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage ➂ DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES VGE(th) DVGE(th)/DTJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance ➃ Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current Min. 1200 — — — — 3.0 — 14 — — — — — Typ. — 0.91 2.79 3.32 2.66 — -10 21 — — 2.5 2.1 — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 3.5 IC = 29A VGE = 15V — V IC = 54A see figures 2, 5 — IC = 29A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 29A 250 µA VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150°C 3.5 V IC = 16A see figure 13 — IC = 16A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 Typ. 190 25 70 110 43 150 200 3.20 2.28 5.48 — — — — — — — — — — — — — — — — — — 73 72 290 390 10.12 2.0 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 280 IC = 29A 38 nC VCC = 400V see figure 8 110 VGE = 15V — — TJ = 25°C ns 230 IC = 29A, VCC = 800V 290 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ and diode reverse recovery 6.5 see figures 9,10,18 — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω — TJ = 150°C, see figures 10,11,18 — IC = 29A, VCC = 800V ns — VGE = 15V, RG = 5.0Ω, — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V see figure 7 — ƒ = 1.0MHz 135 ns TJ = 25°C see figure 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C see figure 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C see figure 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C see figure — TJ = 125°C 17 www.irf.com IRG4ZH50KD 25 F or b oth: D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified LOAD CURRENT (A) 20 P ow er D is s ipation = 34 W 15 S q u a re w a v e : 60% of rated voltage 10 I 5 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector Current (A) 100 100 TJ = 150 ° C 10 TJ = 25 ° C 1 1.0 V GE = 15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 3 I C , Collector-to-Emitter Current (A) 1000 1000 TJ = 150 ° C 10 TJ = 25 ° C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics www.irf.com IRG4ZH50KD 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 58 A 3.0 IC = 29 A IC =14.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) TC , Case Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.001 0.00001 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZH50KD 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 4000 Cies 2000 1000 16 12 8 4 Coes Cres 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 6.6 6.2 5.8 5.4 10 20 30 40 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance 5 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 800V V GE = 15V TJ = 25 ° C I C = 29A 0 40 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 7.0 VCC = 400V I C = 29A 50 RG = 5.0Ω Ohm VGE = 15V VCC = 800V IC = 58 A IC = 29 A 10 IC =14.5 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com IRG4ZH50KD 1000 5.0Ω RG == Ohm T J = 150 ° C VCC = 800V 20 VGE = 15V I C , Collector Current (A) Total Switching Losses (mJ) 25 15 10 VGE = 20V T J = 125 o C 100 10 5 SAFE OPERATING AREA 1 0 0 10 20 30 40 50 1 60 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 1000 100 TJ = 150°C TJ = 125°C 10 TJ = 25°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZH50KD 40 300 VR = 2 00V T J = 125 °C T J = 25°C VR = 20 0V T J = 12 5°C T J = 25 °C 30 200 I R R M - (A ) trr - (n s) I F = 32A I F = 16A I F = 8.0 A I F = 32A 20 I F = 16A 100 I F = 8.0A 10 0 100 di f /dt - (A /µ s) 0 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 di f /d t - (A /µ s) Fig. 15 - Typical Recovery Current vs. dif/dt 1200 1000 VR = 200 V T J = 125°C T J = 25°C VR = 20 0V T J = 125°C T J = 25°C 900 600 di(rec )M /dt - (A /µ s ) Q R R - (nC ) I F = 32A I F = 16A I F = 8.0A 100 I F = 32A I F =16A I F = 8.0 A 300 0 100 di f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt 7 1000 10 100 1000 di f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com IRG4ZH50KD 90% V ge Same type device as D .U.T. +V ge V ce 430µF 80% of Vce D .U .T. Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µ S V ce icIcdtdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdtdt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ Vc Ic dt t4 V d id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZH50KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 600V 4 X IC @25°C 0 - 600V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit 9 Figure 20. Pulsed Collector Current Test Circuit www.irf.com IRG4ZH50KD Case Outline — SMD-10 Dimensions are shown in milimeters 17.30 14.20 E(k) G 4.27 n/c 0.90 5.55 29.00 C 0.90 E E Recommended footprint 10 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 www.irf.com