Bulletin I27504 08/97 MT..KB SERIES Power Modules THREE PHASE AC SWITCH Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case 50 A 90 A 100 A Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved Description A range of extremely compact, encapsulated three phase AC-switches offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications as control motor starter. Major Ratings and Characteristics Parameters IO 54MT.KB 94MT.KB 104MT.KB Units 50 @ TC 90 100 A 80 80 80 °C I FSM @ 50Hz 390 950 1130 A @ 60Hz 410 1000 1180 A @ 50Hz 770 4525 6380 A2s @ 60Hz 700 4130 5830 A2s 7700 45250 63800 A2√s 2 I t I2√t VRRM range 800 to 1600 V TSTG range - 40 to 125 °C TJ - 40 to 125 °C range www.irf.com 1 54-94-104MT..KB Series Bulletin I27504 08/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM /IDRMmax. Code repetitive peak reverse voltage V non-repetitive peak reverse voltage V peak off-state voltage, gate open circuit V @ TJ = 125°C 80 800 900 800 Type number 54MT..KB 94/104MT..KB 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 * For single AC switch 1600 1700 1600 mA 20 * 40 * Forward Conduction Parameter IO ITSM 2 It I2 √t Maximum IRMS output current 54MT.KB 94MT.KB 104MT.KB Units Conditions 50 90 100 A For all conduction angle @ Case temperature 80 80 80 °C Maximum peak, one-cycle 390 950 1130 A forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied on state surge current 330 800 950 t = 10ms 100% V RRM 345 840 1000 t = 8.3ms reapplied 2 Maximum I t for fusing Maximum I2√t for fusing VT(TO)1 Low level value of threshold 2 As t = 10ms No voltage 770 4525 6380 t = 10ms No voltage 700 4130 5830 t = 8.3ms reapplied 540 3200 4510 t = 10ms 100% V RRM 500 2920 4120 t = 8.3ms reapplied 7700 45250 63800 A 2√s 1.16 0.99 0.99 V 1.44 1.19 1.15 12.54 4.16 3.90 11.00 3.56 3.48 2.68 1.55 1.53 Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. voltage VT(TO)2 High level value of threshold (I > π x I T(AV)), @ T J max. voltage rt1 Low level value on-state mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. slope resistance rt2 High level value on-state (I > π x I T(AV)), @ T J max. slope resistance VTM Maximum on-state voltage drop V Ipk = 150A, TJ = 25°C tp = 400µs single junction di/dt Max. non-repetitive rate 150 A/µs IH Max. holding current 200 TJ = 25o C, anode supply = 6V, mA IL 2 Max. latching current TJ = 25oC, from 0.67 VDRM , ITM = π x I T(AV), Ig = 500mA,tr < 0.5 µs, t p > 6 µs of rise of turned on current 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load www.irf.com 54-94-104MT..KB Series Bulletin I27504 08/97 Blocking Parameter VINS 54MT.KB 94MT.KB 104MT.KB Units Conditions RMS isolation voltage 4000 V 500 V/µs TJ = 25 oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise of off-state voltage (*) TJ = TJ max., linear to 0.67 VDRM, gate open circuit (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90. Triggering Parameter PGM 54MT.KB 94MT.KB 104MT.KB Units Conditions Max. peak gate power 10 PG(AV) Max. average gate power W TJ = TJ max. 2.5 IGM Max. peak gate current 2.5 A -V GT Max. peak negative 10 V V gate voltage VGT IGT Max. required DC gate 4.0 voltage to trigger 2.5 TJ = 25°C 1.7 TJ = 125°C Max. required DC gate 270 current to trigger 150 TJ = - 40°C Anode supply = 6V, resistive load mA Max. gate voltage TJ = 25°C TJ = 125°C 80 VGD TJ = - 40°C Anode supply = 6V, resistive load 0.25 V 6 mA @ TJ = TJ max., rated VDRM applied that will not trigger IGD Max. gate current that will not trigger Thermal and Mechanical Specifications Parameter TJ 54MT.KB 94MT.KB 104MT.KB Units Conditions Max. junction operating -40 to 125 °C -40 to 125 °C temperature range Tstg Max. storage temperature range RthJC Max. thermal resistance, 0.52 0.39 0.34 junction to case 1.05 0.77 0.69 DC operation per junction 0.56 0.40 0.36 180° Sine cond. angle per single AC switch 1.12 0.80 0.72 RthCS Max. thermal resistance, K/W 180° Sine cond. angle per junction 0.03 K/W Per module Nm A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. case to heatsink T wt Mounting surface smooth, flat and greased Mounting to heatsink 4 to 6 torque ± 10% to terminal 3 to 4 Approximate weight www.irf.com DC operation per single AC switch 225 g 3 54-94-104MT..KB Series Bulletin I27504 08/97 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction @ TJ max. Devices Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o 54MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 94MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 104MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 Units K/W Ordering Information Table Device Code 1 - 10 4 MT 160 1 2 3 4 K B S90 5 6 Current rating code: 5 = 50 A (Avg) 9 = 90 A (Avg) 10 = 100 A (Avg) 2 - AC Switch 3 - Essential part number 4 - Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) 5 - Generation II 6 - Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com 54-94-104MT..KB Series Bulletin I27504 08/97 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) www.irf.com 5 Optional Hardware MT..KB Series GATE LEADS Ident No. Device Series Description 6443.2112.AA 51, 91, 111MT..KB 2 DX connectors with yellow and white leads 6443.2113.AA 52, 92, 112MT..KB 1 SX + 1 DX connectors with yellow and white leads 6443.2114.AA 53, 93, 113MT..KB 54, 94, 104MT..KB 1 SX + 2 DX connectors with yellow and white leads All dimensions are in millimeters (inches) BARRIERS Ident No. 6444.0211.AA for all MT..KB Series Barriers Mounting Instructions Coat uniformly the groove on the plastic box with a silicon adhesive. Insert the barriers into the groove on the plastic box. Cure the silicon adhesive according to its technical notes. We suggest the use of DOW CORNING Silastic 744RTV (time curing 30 min. at room temperature). All dimensions are in millimeters (inches) Bulletin I27900 rev. A 12/99 1 54-94-104MT..KB Series 1000 130 54MT..KB Series Device Fully Turned-on 120 110 100 Per Single AC Switch 90 80 70 TJ = 25°C Instantaneous On-state Current (A) Maximum Allowable Case Temperature (°C) Bulletin I27504 08/97 For all Conduction Angles TJ = 125°C 100 10 54MT..KB Series Per Junction 60 1 0 10 20 30 40 50 60 0 1 2 3 4 5 6 RMS Output Current (A) Instantaneous On-state Voltage (V) Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics W K/ R ta el -D 0.5 K/ W 0.7 K/W 1K /W 150 Conduction Angle 100 05 0. 200 = K /W 0. 3K /W SA 0. 2 W K/ 250 180° 120° 90° 60° 30° R th 54MT..KB Series TJ = 125°C Device Fully Turned-on 300 1 0. Maximum Total Power Loss (W) (Per Total Module) 350 2 K/W 50 0 0 10 20 30 40 50 RMS Output Current (A) 60 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 325 300 275 250 225 200 175 54MT..KB Series Per Junction 150 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 6 400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 350 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 54MT..KB Series Per Junction 150 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current www.irf.com 54-94-104MT..KB Series 130 1000 94MT..KB Series Device Fully Turned-on 120 Instantaneous On-state Current (A) Maximum Allowable Case Temperature (°C) Bulletin I27504 08/97 110 100 90 Per Single AC Switch 80 70 60 For all Conduction Angles 100 TJ = 25°C 10 TJ = 125°C 94MT..KB Series Per Junction 50 1 0 20 40 60 80 100 120 0 1 2 3 4 5 RMS Output Current (A) Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics 450 /W 3K 0.0 a elt -D R Maximum Total Power Loss (W) (Per Total Module) = 0.3 K/ W 0.5 K/W 0.7 K/W 200 150 SA 250 K /W W K/ 300 0. 15 180° 120° 90° 60° 30° R th 350 05 0. 94MT..KB Series TJ = 125°C Device Fully Turned-on 400 Conduction Angle 100 1 K/W 50 1.5 K/W 0 0 10 20 30 40 50 60 70 80 90 100 0 RMS Output Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 8 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 700 650 600 550 500 450 400 94MT..KB Series Per Junction 350 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current www.irf.com 1000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 750 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRMReapplied 900 800 700 600 500 400 94MT..KB Series Per Junction 300 0.01 0.1 1 Pulse Train Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current 7 54-94-104MT..KB Series 1000 130 104MT..KB Series Device Fully Turned-on 120 Instantaneous On-state Current (A) Maximum Allowable Case Temperature (°C) Bulletin I27504 08/97 110 100 Per Single AC Switch 90 80 70 For all Conduction Angles 100 TJ = 25°C 10 TJ = 125°C 104MT..KB Series Per Junction 60 1 0 20 40 60 80 100 0 120 1 2 3 4 5 RMS Output Current (A) Instantaneous On-state Voltage (V) Fig. 11 - Current Ratings Characteristic Fig. 12 - Forward Voltage Drop Characteristics 500 W K/ a elt -D 300 .03 =0 0.3 K/W 250 R Maximum Total Power Loss (W) (Per Total Module) SA R th 350 15 0. 400 W K/ 05 0. /W K 104MT..KB Series 180° TJ = 125°C 120° Device Fully 90° Turned-on 60° 30° 450 100 0.5 K/W 0.7 K/W 1 K/W 50 1.5 K/W 200 Conduction Angle 150 0 0 20 40 60 80 100 RMS Output Current (A) 120 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 13 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 500 104MT..KB Series Per Junction 400 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 8 1200 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 1100 1000 900 800 700 600 500 104MT..KB Series Per Junction 400 0.01 0.1 1 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 54-94-104MT..KB Series Bulletin I27504 08/97 Transient Thermal Impedance ZthJC (K/W) 10 Steady State Value R thJC = 1.05 K/W 1 54MT..KB Series 94MT..KB Series R thJC = 0.77 K/W R thJC = 0.69 K/W (DC Operation) 104MT..KB Series 0.1 0.01 Per Junction 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 16 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b) Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs 10 (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 54/ 94/ 104MT..KB Series Frequency Limited by PG(AV) 0.1 10 1 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9