IRF 10BQ030PBF

Bulletin PD-20708 rev. G 07/04
10BQ030
1 Amp
SCHOTTKY RECTIFIER
IF(AV) = 1 Amp
VR = 30V
Description/ Features
Major Ratings and Characteristics
Characteristics
10BQ030
Units
IF(AV) Rectangular
waveform
1.0
A
VRRM
30
V
IFSM @ tp= 5 ms sine
430
A
0.30
V
- 55 to 150
°C
The 10BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
VF
@ 1.0Apk, TJ= 125°C
TJ
range
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10BQ030
SMB
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1
10BQ030
Bulletin PD-20708 rev. G 07/04
Voltage Ratings
Part number
VR
10BQ030
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
10BQ
Units
IF(AV) Max. Average Forward Current
1.0
A
IFSM
430
Max. Peak One Cycle Non-Repetitive
Conditions
50% duty cycle @ TL = 106 °C, rectangular wave form.
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6
90
EAS
Non-Repetitive Avalanche Energy
3.0
mJ
IAR
Repetitive Avalanche Current
1.0
A
TJ = 25 °C, IAS = 1A, L = 6mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
VFM
VFM
10BQ
Max. Forward Voltage Drop
Max. Forward Voltage Drop
(1)
(1)
Units
Conditions
0.420
V
@ 1A
0.470
V
@ 2A
0.300
V
@ 1A
0.370
V
@ 2A
TJ = 25 °C
TJ = 125 °C
0.5
mA
TJ = 25 °C
IRM
Max. Reverse Leakage Current (1)
5.0
mA
TJ = 100 °C
15
mA
TJ = 125 °C
CT
Max. Junction Capacitance
200
pF
VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C
LS
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
10000
V/µs
dv/dt Max. Voltage Rate of Change
VR = rated VR
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
10BQ
Units
TJ
Max. Junction Temperature Range (*) - 55 to 150
°C
Tstg
Max. Storage Temperature Range
°C
- 55 to 150
Conditions
RthJL Max. Thermal Resistance Junction
to Lead
(**)
25
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
80
°C/W
0.10 (0.003) g (oz.)
Case Style
SMB
Device Marking
IR1E
(*) dPtot
dTj
<
1
Rth( j-a)
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
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10BQ030
Bulletin PD-20708 rev. G 07/04
10
TJ = 125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
0.0001
0
10
20
TJ = 125°C
Reverse Voltage - VR (V)
TJ = 25°C
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1
30
1000
0.1
0
0.2
0.4
0.6
0.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junc tion Capa citance - C T (pF)
Instantaneous Forward Current - I F (A)
Reverse Current - I R (mA)
10
TJ = 25°C
100
10
0
10
20
30
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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10BQ030
Bulletin PD-20708 rev. G 07/04
0.5
DC
Average Power Loss - (Watts)
Allowable Case Temperature - (°C)
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
100
Square wave (D = 0.50)
80% Rated VR applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.4
0.3
DC
RMSLimit
0.2
0.1
see note (2)
90
0
0.4
0.8
1.2
0
1.6
0
Average Forward Current - I F(AV) (A)
0.8
1.2
1.6
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Non-Repetitive Surge Current - I FSM (A)
0.4
Average Forward Current - I F(AV) (A)
1000
100
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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10BQ030
Bulletin PD-20708 rev. G 07/04
Outline Table
Device Marking: IR1E
CATHODE
2.15 (.085)
1.80 (.071)
1
3.80 (.150)
3.30 (.130)
ANODE
2
1 POLARITY
4.70 (.185)
2 PART NUMBER
4.10 (.161)
2.5 TYP.
(.098 TYP.)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.0 TYP.
(.079 TYP.)
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1E
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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10BQ030
Bulletin PD-20708 rev. G 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
B
Q
030
TR
-
1
2
3
4
5
6
1
-
2
-
Current Rating
B = Single Lead Diode
3
-
Q = Schottky Q Series
4
-
Voltage Rating (030 = 30V)
5
-
y none = Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
6
y none = Standard Production
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
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