IRF IRFP450NPBF

PD- 95663
SMPS MOSFET
IRFP450NPbF
HEXFET® Power MOSFET
Applications
Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
l
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
VDSS
Rds(on) max
ID
500V
0.37Ω
14A
l
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
14
8.8
56
200
1.6
± 30
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l
l
l
Two transistor Forward
Half Bridge and Full Bridge
PFC Boost
Notes 
through … are on page 8
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1
7/30/04
IRFP450NPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.59
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
–––
V/°C Reference to 25°C, ID = 1mA
0.37
Ω
VGS = 10V, ID = 8.4A „
5.0
V
VDS = VGS, ID = 250µA
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
63
29
25
2260
210
14
2410
59
110
Max. Units
Conditions
–––
S
VDS = 50V, ID = 8.4A
77
ID = 14A
26
nC
VDS = 400V
34
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 250V
–––
ID = 14A
ns
–––
RG = 6.2Ω
–––
VGS = 10V,See Fig. 10 „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, V DS = 0V to 400V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
170
14
20
mJ
A
mJ
Typ.
Max.
Units
–––
0.24
–––
0.64
–––
40
°C/W
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
14
––– –––
showing the
A
G
integral reverse
––– –––
56
S
p-n junction diode.
––– ––– 1.4
V
TJ = 25°C, IS = 14A, VGS = 0V „
––– 430 650
ns
TJ = 25°C, IF = 14A
––– 3.7 5.6
µC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFP450NPbF
100
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
1
6.0V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
6.0V
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 150 ° C
10
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
7.0
8.0
9.0
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
6.0
20µs PULSE WIDTH
TJ = 150 ° C
1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10.0
ID = 14A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP450NPbF
100000
VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
10
Crss
1
1
10
100
ID = 14A
VDS = 400V
VDS = 250V
VDS = 100V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
1000
0
VDS, Drain-to-Source Voltage (V)
0
20
40
60
80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.4
100
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP450NPbF
14
V DS
VGS
ID , Drain Current (A)
12
RD
D.U.T.
RG
+
-VDD
10
10V
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
VDS
2
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFP450NPbF
300
TOP
250
BOTTOM
ID
6.3A
8.9A
14A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP450NPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP450NPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
PART NUMBE R
INTERNATIONAL
RECTIFIER
LOGO
IRF PE30
56
ASSEMBLY
LOT CODE
035H
57
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.7mH
RG = 25Ω, IAS = 14A. (See Figure 12)
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ƒ ISD ≤ 14A, di/dt ≤ 510A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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