SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS(on),max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge PG-TO220FP • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target applications • Pb-free lead plating; RoHS compliant Type Package Ordering Code Marking SPA20N60CFD PG-TO220FP SP000216361 20N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 1) ID Value T C=25 °C 20.7 T C=100 °C 13.1 Pulsed drain current2) I D,pulse T C=25 °C 52 Avalanche energy, single pulse E AS I D=10 A, V DD=50 V 690 Avalanche energy, repetitive t AR2),3) E AR I D=20 A, V DD=50 V 1 Avalanche current, repetitive t AR2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 A 80 V/ns 40 V/ns di /dt I S=20.7 A, V DS=480 V, T j=125 °C 900 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 35 W -55 ... +150 °C Power dissipation P tot Operating and storage temperature T j, T stg Rev. 1.3 I D=20.7 A, V DS=480 V, T j=125 °C Unit page 1 2009-12-22 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 3.6 leaded - - 62 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, wave soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=20 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1000µA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 2.1 - V DS=600 V, V GS=0 V, T j=150 °C - 1700 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=13.1 A, T j=25 °C - 0.19 0.22 Ω V GS=10 V, I D=13.1 A, T j=150 °C - 0.43 - Gate resistance RG f =1 MHz, open drain - 0.54 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=13.1 A - 17.5 - Rev. 1.3 page 2 S 2009-12-22 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 780 - - 50 - - 83 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 160 - Turn-on delay time t d(on) - 12 - Rise time tr - 15 - Turn-off delay time t d(off) - 59 - Fall time tf - 6.4 - Gate to source charge Q gs - 15 - Gate to drain charge Q gd - 54 - Gate charge total Qg - 95 124 Gate plateau voltage V plateau - 7.0 - V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=380 V, V GS=10 V, I D=20.7 A, R G=3.6 Ω ns Gate Charge Characteristics V DD=480 V, I D=20.7 A, V GS=0 to 10 V 0) J-STD20 and JESD22 1) Limited only by maximum temperature. 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 page 3 nC V 2009-12-22 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 20.7 - - 52 - 1.0 1.2 V - 150 - ns - 1 - µC - 13 - A Reverse Diode Diode continuous forward current 1) IS Diode pulse current 2) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm T C=25 °C V GS=0 V, I F=20.7 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.00862 R th2 Value Unit typ. K/W C th1 0.000205 0.0471 C th2 0.00198 R th3 0.119 C th3 0.0068 R th4 0.476 C th4 0.0482 R th5 1.57 C th5 0.957 C th6 0.1 Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.3 page 4 2009-12-22 SPA20N60CFD 1 Power dissipation 2 Safe operating area P TOT=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 40 102 1 µs limited by on-state resistance 10 µs 100 µs 30 I D [A] P tot [W] 101 20 101 ms ms 100 10 DC 10-1 0 0 40 80 120 100 160 101 102 T C [°C] 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC =f(tP) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 60 10 V 50 8V 0.5 Z thJC [K/W] 100 40 0.2 7.5 V I D [A] 0.1 0.05 30 7V 0.02 10-1 20 0.01 6.5 V 10 6V single pulse 5.5 V 10 5V -2 10-5 0 10-4 10-3 10-2 10-1 100 101 102 Rev. 1.3 0 5 10 15 20 25 V DS [V] t p [s] page 5 2009-12-22 SPA20N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); Tj=150°C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 1.5 40 4.5 V 5.5 V 6.5 V 20 V 6V 7.5 V 1.2 30 5V 20 7V R DS(on) [Ω] I D [A] 7V 6.5 V 0.9 7.5 V 20 V 0.6 6V 10 0.3 5.5 V 5V 4.5 V 0 0 0 4 8 12 16 20 24 0 28 10 20 V DS [V] 30 40 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=13.1 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 70 0.6 60 typ 0.5 C °25 98 % 50 40 I D [A] R DS(on) [Ω] 0.4 0.3 C °150 30 0.2 20 0.1 10 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 0 4 8 12 16 20 V GS [V] page 6 2009-12-22 SPA20N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=20.7 A pulsed I F=f(V SD) parameter: V DD parameter: T j 15 102 25°C, 98% 120 V 480 V 101 150 °C I F [A] VRev R 10 150°C 98% 25 °C 5 0 10-1 0 50 100 150 0 0.5 1 1.5 2 140 180 V SD [V] Q gate [nC] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=10 A; V DD=50 V parameter: T j(start) 20 750 600 15 E AS [mJ] I AV [A] 450 10 25 °C 125 °C 300 5 150 0 10-3 0 10-2 10-1 100 101 102 103 104 t AR [µs] Rev. 1.3 20 60 100 T j [°C] page 7 2009-12-22 SPA20N60CFD 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(Tj );I D=10mA C =f(V DS); V GS=0 V; f =1 MHz 105 700 104 660 10 C [pF] V BR(DSS) [V] Ciss 3 620 102 Coss 580 Crss 101 100 540 -60 -20 20 60 100 140 0 180 100 T j [°C] 200 300 400 500 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j); I S=20.7 A 14 1.8 12 1.6 8 Q rr [µC] E oss [µJ] 10 6 4 1.4 1.2 2 0 1 0 200 400 600 V DS [V] Rev. 1.3 25 50 75 100 125 T j [°C] page 8 2009-12-22 SPA20N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Qrr = f(I S); di /dt =100A/µs Q rr=f(di /dt ); I D =20.7 A parameter: T j parameter: T j 2 3.5 3 125 °C 1.5 Q rr [µC] Q rr [µC] 2.5 1 125 °C 2 25 °C 0.5 1.5 25 °C 0 1 2 4 6 8 10 12 14 16 18 20 I S [A] Rev. 1.3 100 300 500 700 900 di/ dt [A/µs] page 9 2009-12-22 SPA20N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2009-12-22 SPA20N60CFD PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev 1.3 page 11 2009-12-22 SPA20N60CFD Published by Infineon Technologies AG D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 12 2009-12-22