IRF IRFY240CM

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Provisional Data Sheet No. PD 9.1289B
IRFY240CM
HEXFET® POWER MOSFET
N-CHANNEL
Product Summary
200 Volt, 0.18Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
Part Number
BVDSS
RDS(on)
ID
IRFY240CM
200V
0.18Ω
16A
Features
n
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Ceramic Eyelets
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Absolute Maximum Ratings
Parameter
ID @ V GS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
IRFY240CM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy ‚
Avalance Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
16
10.2
64
100
0.8
±20
580
16
10
5
-55 to 150
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
°C
g
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IRFY240CM Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
200
—
—
—
0.29
—
—
—
2.0
6.1
—
—
—
—
—
—
—
—
0.18
0.25
4.0
—
25
250
—
—
32
2.2
14.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
60
10.6
37.6
20
152
58
67
—
∆BV DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ. Max. Units
IGSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1300
400
130
—
—
—
V
Test Conditions
VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
Ω
VGS = 10V, ID = 10.2A „
VGS = 10V, ID = 16A
V
VDS = VGS, ID = 250µA
S ( ) VDS ≥ 15V, IDS = 10.2A „
VDS = 0.8 x max. rating,VGS = 0V
µA
VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C
VGS = 20V
nA
VGS = -20V
VGS = 10V, ID = 16A
nC
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 100V, ID =16A, RG = 9.1Ω
VGS = 10V
ns
Ω
BVDSS
see figure 10
nH
pF
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Modified MOSFET symbol
showing the internal
inductances.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
VGS = 0v, V DS = 25V
f = 1.0MHz.
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
—
—
—
—
16
64
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.5
500
5.3
V
ns
µC
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = 16A, VGS = 0V „
Tj = 25°C, IF = 16A, di/dt ≤ 100 A/µs
VDD ≤ 50 V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
RthJA Junction-to-Ambient
RthCS Case-to-Sink
Min. Typ. Max. Units
—
—
—
—
—
0.21
To Order
1.25
80 K/W…
—
Test Conditions
Typical socket mount
Mounting surface flat, smooth
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IRFY240CM Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
ID = 16A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs. Temperature
I D = 16A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFY240CM Device
1000
ID , Drain Current (A)
OPERAT ION IN THIS AREA LIMITED
BY R DS(on)
100
10µs
10
100µs
1ms
TC = 25°C
TJ = 150°C
Single Pulse
1
1
10ms
A
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 7 — Typical Source-to-Drain Diode
Forward Voltage
Fig. 8 — Maximum Safe Operating Area
ID, Drain Current (Amps)
16
12
8
4
A
0
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
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IRFY240CM Device
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P
DM
0.10
0.1
t1
t2
0.05
0.02
0.01
Notes:
1. Duty factor D = t / t
1 2
SINGLE PULSE
(TH ERMAL RESPONSE)
0.01
0.00001
2. Peak TJ = PDMx Z thJC + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , Rectangular Pulse Duration (sec)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
V (BR)DSS
DRIVER
L
VDS
D.U.T
RG
tp
+
- VDD
I AS
A
I AS
0.01Ω
tp
E AS , Single Pulse Avalanche Energy (mJ)
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
600
500
400
300
200
100
0
I D = 18A
V DD = 50V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig. 12c — Max. Avalanche Energy vs. Current
To Order
Fig. 13a — Gate Charge Test Circuit
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Notes:
IRFY240CM Device
 Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
‚ @ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 16A, VGS = 10V, 25 ≤ R G ≤ 200Ω (figure 12)
ƒ I SD ≤ 16A, di/dt ≤ 150A/µs, VDD ≤ BVDSS, T J ≤ 150°C
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
… K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
3
1
2
TO-257AA
NON-STANDARD PIN CONFIGURATION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY240C
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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Data and specifications subject to change without notice.
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