Bulletin PD-21080 08/05
60EPU04PbF
60APU04PbF
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Lead-Free ("PbF" suffix)
trr = 50ns (typ)
IF(AV) = 60Amp
VR = 400V
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Max
Units
VR
Parameters
Cathode to Anode Voltage
400
V
IF(AV)
Continuous Forward Current, TC = 127°C
60
A
IFSM
Single Pulse Forward Current, TC = 25°C
600
IFRM
Maximum Repetitive Forward Current
120
TJ, TSTG
Operating Junction and Storage Temperatures
- 55 to 175
°C
Square Wave, 20kHz
Case Styles
60EPU04PbF
60APU04PbF
CATHODE
TO BASE
2
1
CATHODE
CATHODE
TO BASE
2
3
ANODE
TO-247AC (Modified)
www.irf.com
1
ANODE
3
ANODE
TO-247AC
1
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
Breakdown Voltage,
Blocking Voltage
400
VF
Forward Voltage
IR
Reverse Leakage Current
-
-
V
IR = 100µA
-
1.05 1.25
V
IF = 60A
-
0.87 1.03
V
IF = 60A, TJ = 175°C
-
0.93 1.10
V
IF = 60A, TJ = 125°C
-
-
50
µA
VR = V R Rated
-
-
2
mA
TJ = 150°C, VR = V R Rated
CT
Junction Capacitance
-
50
-
pF
VR = 400V
LS
Series Inductance
-
3.5
-
nH
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr
Reverse Recovery Time
IRRM
Qrr
Peak Recovery Current
Reverse Recovery Charge
Min Typ Max Units Test Conditions
-
50
60
-
85
-
ns
TJ = 25°C
-
145
-
TJ = 125°C
-
8.8
-
-
15.4
-
-
375
-
-
1120
-
A
IF = 1A, diF/dt = 200A/µs, VR = 30V
IF = 60A
VR = 200V
diF /dt = 200A/µs
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
Min
Typ
RthJC
Thermal Resistance, Junction to Case
RthCS
Thermal Resistance, Case to Heatsink
0.2
Wt
Weight
5.5
T
Mounting Torque
Max
Units
0.70
K/W
g
0.2
Marking Device
1.2 (10)
(oz)
2.4 (20)
N*m (lbf.in)
60EPU04, 60APU04
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
1000
1000
Reverse Current - I R (µA)
100
100
125˚C
10
1
25˚C
0.1
0.01
0.001
0
T = 175˚C
J
100
200
300
400
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T = 125˚C
J
T = 25˚C
J
1000
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
T J = 175˚C
10
T J = 25˚C
100
10
1
0
0.5
1
1.5
2
1
2.5
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
www.irf.com
3
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
100
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
180
160
140
DC
120 Square wave (D = 0.50)
80% Rated Vr applied
100
80
RMS Limit
60
20
see note (3)
0
80
0
20
40
60
80
0
100
Average Forward Current - IF(AV) (A)
60
80
100
3500
Vr = 400V
Tj = 125˚C
Tj = 25˚C
2500
Qrr ( nC )
140
120
1500
1000
80
500
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
IF = 120A
IF = 60A
IF = 40A
2000
100
di F /dt (A/µs )
Vr = 400V
Tj = 125˚C
Tj = 25˚C
3000
IF = 120A
IF = 60A
IF = 40A
160
60
100
40
Fig. 6 - Forward Power Loss Characteristics
200
180
20
Average Forward Current - IF(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
trr ( ns )
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
40
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x R thJC ;
Pd = Forward Power Loss = I F(AV) x VFM @ (I F(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = V R1 x IR (1 - D); I R @ VR1 = 80% rated VR
4
www.irf.com
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
Reverse Recovery Circuit
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
di F /dt
dif/dt
ADJUST
D
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t rr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
/dt
di fF/dt
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
t rr x I RRM
Q rr =
2
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
www.irf.com
5
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
Outline Table
60EPU04PbF
3. 65 (0 .144)
15 .90 (0.626 )
3. 55 (0 .139)
DIA.
5. 30 (0.20 9)
4.70 ( 0.185)
15 .30 (0.602 )
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .225)
BASE
COMMON
CATHODE
2
5.30 ( 0.208)
20.30 (0 .800)
19.70 (0 .775)
5.50 ( 0.217)
4. 50 (0 .17 7)
1
(2 PLCS.)
3
1
CATHODE
14. 80 ( 0.583)
3
ANODE
4. 30 (0.17 0)
14 .20 (0 .559 )
3. 70 (0.14 5)
2. 20 (0 .087)
1. 40 ( 0 .05 6)
2. 40 (0 .09 5)
MAX .
M AX .
1. 00 (0 .039)
0.80 ( 0.032)
0. 40 (0 .21 3)
10. 94 ( 0.430)
10 .86 (0 .427 )
Dimensions in millimeters and inches
60APU04PbF
BASE
COMMON
CATHODE
2
15 .90 (0 .626 )
3. 65 (0 .14 4)
3. 55 (0 .13 9)
DIA.
15 .30 (0 .602 )
5. 30 (0 .20 9)
4.70 ( 0.185)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5)
5.30 ( 0.208)
20 .30 (0 .800 )
ANODE
1
ANODE
3
19 .70 (0 .775 )
5.50 ( 0.217)
4. 50 ( 0 .17 7)
1
2
(2 PLCS.)
3
14. 80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0 .17 0)
3. 70 (0 .14 5)
2. 20 (0 .08 7)
1. 40 (0 .05 6)
1. 00 (0 .03 9)
2. 40 (0 .09 5)
M AX .
M AX .
0.80 ( 0.032)
0. 40 (0 .21 3)
10. 94 ( 0.430)
10 .86 (0 .427 )
6
www.irf.com
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
Marking Information
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 60EPU04
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
60EPU04
P035H
56
57
ASSEMBLY
LOT CODE
EXAMPLE: THIS IS A 60APU04
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
60APU04
P035H
56
ASSEMBLY
LOT CODE
57
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
Ordering Information Table
Device Code
60
E
P
U
1
2
3
4
04 PbF
5
1
-
Current Rating (60 = 60A)
2
-
Circuit Configuration:
6
E = Single Diode
A = Single Diode, 3 pins
3
-
Package:
P = TO-247AC (Modified)
4
-
Type of Silicon:
5
-
Voltage Rating (04 = 400V)
6
-
U = UltraFast Recovery
none = Standard Production
PbF = Lead-Free
www.irf.com
7
60EPU04PbF, 60APU04PbF
Bulletin PD-21080 08/05
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/05
8
www.irf.com