Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V G @VGE = 15V, IC = 9.0A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 16 9.0 64 64 ±20 5.0 60 24 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-51 To Order Min. Typ. Max. — — — — — 0.50 — 2.0 (0.07) 2.1 — 80 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGBC20F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.72 — V/°C VGE = 0V, IC = 1.0mA — 2.0 2.8 IC = 9.0A VGE = 15V — 2.6 — V IC = 16A See Fig. 2, 5 — 2.3 — IC = 9.0A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 2.9 5.1 — S VCE = 100V, IC = 9.0A — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 16 21 IC = 9.0A 2.4 3.4 nC VCC = 400V See Fig. 8 7.8 10 VGE = 15V 24 — TJ = 25°C 13 — ns IC = 9.0A, V CC = 480V 160 270 VGE = 15V, RG = 50Ω 310 600 Energy losses include "tail" 0.18 — 0.90 — mJ See Fig. 9, 10, 11, 14 1.08 2.0 25 — TJ = 150°C, 18 — ns IC = 9.0A, V CC = 480V 210 — VGE = 15V, RG = 50Ω 600 — Energy losses include "tail" 1.65 — mJ See Fig. 10, 14 7.5 — nH Measured 5mm from package 340 — VGE = 0V 63 — pF VCC = 30V See Fig. 7 5.9 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-52 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGBC20F 20 Fo r b oth : 16 LO A D C UR R E N T (A ) T riangular wav e: D uty cyc le: 50% T J = 12 5°C T s in k = 90°C G a te d rive as spe cified P ow er D iss ip ation = 13W S quare w av e: 12 C lam p voltage: 80% o f ra te d 60% of rated v oltage 8 Ideal diodes 4 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 TJ = 25 °C I C , Collector-to-E m itter C urrent (A ) I C , C ollector-to-E mitte r C urren t (A ) 100 TJ = 25 °C TJ = 1 50 °C 10 1 TJ = 1 50 °C 10 V G E = 15 V 2 0 µs P U L S E W ID TH 0.1 0.1 1 V C C = 1 00 V 5 µs P U L S E W ID TH 1 5 10 10 15 V G E , G ate-to-E m itter V olta g e (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-53 To Order 20 Previous Datasheet Index Next Data Sheet IRGBC20F 4.0 V G E = 15 V VC E , C o lle ctor-to-E m itter V oltage (V ) M aximu m D C C o lle ctor C u rrent (A ) 16 12 8 4 VG E = 1 5 V 80 µs P UL S E W ID TH I C = 18 A 3.5 3.0 2.5 I C = 9.0 A 2.0 I C = 4.5A 1.5 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .0 5 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t2 N o te s: 1 . D u ty fa c to r D = t 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-54 To Order 10 Previous Datasheet Index Next Data Sheet IRGBC20F 7 00 5 00 Cies 4 00 Coes V G E , G ate-to-Em itter V oltage (V ) 6 00 C , C apa citanc e (p F ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 3 00 2 00 Cres 1 00 V C E = 4 00 V I C = 9.0A 16 12 8 4 0 0 1 10 10 0 0 4 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1 .3 4 12 16 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 48 0 V = 15 V = 25 °C = 9.0A To ta l S w itc hing Lo sse s (m J) To ta l S w itch in g Losses (m J) 1 .3 6 8 Q g , Total G ate C harge (nC ) 1 .3 2 1 .3 0 1 .2 8 R G = 50 Ω V GE = 15 V V CC = 48 0 V I C = 1 8A I C = 9.0A 1 I C = 4.5 A 1 .2 6 1 .2 4 0.1 20 30 40 50 60 -60 R G , G ate R esistance (Ω ) -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem peratu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 Fig. 10 - Typical Switching Losses vs. Case Temperature C-55 To Order Previous Datasheet Index Next Data Sheet IRGBC20F RG TC V CC VGE 100 = 50 Ω = 150 °C = 4 80 V = 15 V I C , C ollector-to-E mitte r C urren t (A ) Total S w itching Losses (m J) 4.0 3.0 2.0 1.0 VGGE E= 2 0V T J = 12 5°C S A FE O P E R A TIN G A R E A 10 1 0.0 4 8 12 16 1 20 10 100 V C E , Collecto r-to-E m itter V oltage (V ) I C , C o llector-to -E m itte r Current (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB C-56 To Order Section D - page D-12 1000