BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration 1=D 2=S Package 3 = G1 4 = G2 SOT-343 Maximum Ratings Parameter Symbol Drain-source voltage VDS 12 V Continuos drain current ID 30 mA Gate 1/gate 2 peak source current ±I G1/2SM 10 Total power dissipation, T S = 76 °C Ptot 200 Storage temperature T stg - 55 ...+150 Channel temperature T ch 150 Value Unit mW °C Thermal Resistance Channel - soldering point Semiconductor Group Semiconductor Group Rthchs 11 ≤280 K/W Au 1998-11-01 -17-1998 BF 2000W Electrical Characteristics at TA = 25 °C; unless otherwise specified. Symbol Values Parameter Unit min. typ. max. DC characteristics Drain-source breakdown voltage V(BR)DS 12 - - V I D = 10 µA, -VG1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±V (BR)G1SS 8 - 12 ±V (BR)G2SS 8 - 12 ±I G1SS - - 50 ±I G2SS - - 50 Drain current I DSS - - 1 µA VDS = 5 V, V G1S = 0 , V G2S = 4 V Gate 1-source pinch-off voltage VG1S(p) - 0.3 - V VG2S(p) - 0.2 - ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current nA ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V VDS = 5 V, V G2S = 4 V, I D = 200 µA Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -17-1998 BF 2000W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. gfs - 24 - mS Cg1ss - 1.2 - pF Cg2ss - - - Cdg1 - 25 - fF Cdss - 0.8 - pF G ps 28 29 - dB G ps - 22 - F - 1.1 - F - 1 - 40 - - AC characteristics Forward transconductance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Feedback capacitance VDS = 8 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz ∆G ps Gain control range VDS = 8 V, VG2S = 4 ... -2V, f = 800 MHz Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -17-1998