IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability PG-TO220-2-2 • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDT06S60C PG-TO220-2-2 D06S60C C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<140 °C 6 RMS forward current I F,RMS f =50 Hz 9 T C=25 °C, t p=10 ms 49 Surge non-repetitive forward current, I F,SM sine halfwave Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 28 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 210 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 12 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 63 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque Rev. 2.1 M3 and M3.5 screws page 1 60 Ncm 2008-06-06 IDT06S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 2.4 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed al leads T 1.6mm(0.063 in.) from case for 10s - - 260 °C 600 - - V sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C - 1.7 2.1 V R=600 V, T j=25 °C - 0.7 80 V R=600 V, T j=150 °C - 3 800 - 15 - nC - - <10 ns pF Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 280 - V R=300 V, f =1 MHz - 35 - V R=600 V, f =1 MHz - 35 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 5mA. 3) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Rev. 2.1 Only capacitive charge occuring, guaranteed by design. page 2 2008-06-06 IDT06S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: RthJC(max); VF(max) 18 70 16 60 14 50 40 I F [A] P tot [W] 12 10 8 30 6 20 4 10 2 0 0 25 50 75 100 125 150 175 25 200 50 75 T C [°C] 100 125 150 175 200 T C [°C] 3 Typ. forward characteristic 4 Typ. forward characteristc in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter Tj 70 18 100 °C 175 °C 175 °C 16 60 25 °C 150 °C 14 -55 °C 50 40 10 25 °C I F [A] I F [A] 12 8 30 100 °C 6 20 150 °C 4 10 2 -55 °C 0 0 0 1 2 3 4 V F [V] Rev. 2.1 0 2 4 6 8 V F [V] page 3 2008-06-06 IDT06S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 101 30 0.1 1 25 100 0.2 20 I R [µA] P F(AV) [W] 0.5 15 10-1 175 °C 10 100 °C 10-2 150 °C 25 °C 5 -55 °C 10 0 0 5 10 -3 100 15 200 I F(AV) [A] 300 400 500 600 V R [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 400 300 0.5 Z thJC [K/W] 100 C [pF] 0.2 0.1 200 0.05 0.02 10-1 0.01 100 single pulse 10-2 10-5 0 10-4 10-3 10-2 10-1 100 101 102 103 V R [V] t P [s] Rev. 2.1 10-1 page 4 2008-06-06 IDT06S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 8 20 7 6 15 Q c [nC] E c [µC] 5 4 10 3 2 5 1 0 0 0 100 200 300 400 500 600 Rev. 2.1 100 400 700 1000 di F/dt [A/µs] V R [V] page 5 2008-06-06 IDT06S60C PG-TO220-2-2: Outline Dimensions in mm/inches Rev. 2.1 page 6 2008-06-06 IDT06S60C Rev. 2.1 page 7 2008-06-06