SPD 28N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 28 A • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging SPD28N03 P-TO252 Q67040-S4138 Tape and Reel SPU28N03 P-TO251-3-1 Q67040-S4140-A2 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C, 1) 28 TC = 100 ˚C 28 Pulsed drain current Unit IDpulse 112 EAS 145 EAR 7.5 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 75 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 28 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 28 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 06.99 SPD 28N03 Thermal Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Thermal resistance, junction - case RthJC - 2 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area2) - - 50 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS ID = 50 µA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 30 V, VGS = 0 V, T j = 25 ˚C VDS = 30 V, VGS = 0 V, T j = 150 ˚C Gate-source leakage current I GSS 0.1 1 - - 100 - 10 100 nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 28 A - 0.014 0.023 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 28N03 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. g fs 10 23 - S Ciss - 860 1075 pF Coss - 450 565 Crss - 195 245 t d(on) - 16 24 tr - 38 57 t d(off) - 35 53 tf - 36 54 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 28 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Ω Rise time VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Ω Turn-off delay time VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Ω Fall time VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Ω Data Sheet 3 06.99 SPD 28N03 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 4 6 Q gd - 13.6 20 Qg - 25 38 V(plateau) - 5.6 - V IS - - 28 A I SM - - 112 VSD - 1.1 1.7 V t rr - 38 57 ns Q rr - 0.032 Dynamic Characteristics Gate to source charge nC VDD = 24 V, ID = 28 A Gate to drain charge VDD = 24 V, ID = 28 A Gate charge total VDD = 24 V, ID = 28 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 28 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 56 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge 0.048 µC VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 06.99 SPD 28N03 Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD28N03 SPD28N03 80 30 A W 24 22 20 50 ID Ptot 60 18 16 40 14 12 30 10 8 20 6 4 10 2 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 SPD28N03 10 1 SPD28N03 K/W A 10 0 tp = 28.0µs 10 -1 on ) = ID V DS Z thJC /I D 10 2 R DS ( 100 µs D = 0.50 10 -2 10 1 0.20 0.10 1 ms 0.05 10 ms 10 0 10 1 V 10 10 -4 -7 10 2 VDS Data Sheet 0.01 single pulse DC 10 0 -1 10 0.02 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 06.99 SPD 28N03 Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD28N03 70 SPD28N03 Ptot = 75W 0.075 A lkj i h g 55 b 4.5 0.060 c 5.0 0.055 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 d j 8.5 0.030 k 9.0 0.025 l 10.0 50 f 45 ID b c d e f VGS [V] a 4.0 40 e 35 30 25 20 15 RDS(on) 60 Ω 0.035 10 0.020 g 0.015 h ki lj 0.010 VGS [V] = b 0.005 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.045 0.040 c 5 0.050 V 5.0 b 4.5 c 5.0 0.000 0 VDS d 5.5 10 e f 6.0 6.5 g 7.0 20 h i 7.5 8.0 30 j 8.5 40 k l 9.0 10.0 A 55 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs gfs = f(ID ); Tj = 25˚C VDS ≥ 2 x I D x RDS(on) max parameter: gfs 25 70 A S gfs ID 50 40 30 15 10 20 5 10 0 2 4 6 V 0 0 10 VGS Data Sheet 5 10 15 20 25 30 A 40 ID 6 06.99 SPD 28N03 Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 50 µA parameter : ID = 28 A, VGS = 10 V SPD28N03 5.0 V 0.060 Ω 4.4 4.0 0.045 VGS(th) RDS(on) 0.050 0.040 3.2 2.8 0.035 0.030 max 2.4 98% 2.0 0.025 1.6 0.020 typ typ 1.2 0.015 0.8 0.010 min 0.4 0.005 0.000 -60 3.6 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 3 2000 SPD28N03 A pF C IF 10 2 1000 Ciss 10 1 Tj = 25 ˚C typ Coss 500 Tj = 175 ˚C typ Tj = 25 ˚C (98%) Crss 0 0 5 10 15 20 25 V Tj = 175 ˚C (98%) 10 0 0.0 35 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 06.99 SPD 28N03 Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 28 A, V DD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 28 A SPD28N03 150 16 V mJ 100 VGS EAS 12 10 0,2 VDS max 75 0,8 VDS max 8 6 50 4 25 2 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 4 8 12 16 20 24 28 nC 36 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD28N03 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 06.99