Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET® POWER MOSFET IRFN250 N-CHANNEL Ω HEXFET 200 Volt, 0.100Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. Part Number IRFN250 BVDSS 200V RDS(on) 0.100Ω ID 27.4A Features: ■ ■ ■ ■ ■ ■ ■ Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG IRFN250 Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight To Order 27.4 17 110 150 1.2 ±20 500 27.4 15.0 5.0 -55 to 150 Units A W W/K ➄ V mJ A mJ V/ns oC 300 (for 5 seconds) 2.6 (typical) g Previous Datasheet Index Next Data Sheet IRFN250 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 200 — — 0.29 — — — — 2.0 9.0 — — — — — — — — 0.100 0.105 4.0 — 25 250 IGSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — 55 8.0 30 — — — — — — — — — — — — — — 2.0 100 -100 115 22 60 35 190 170 130 — LS Internal Source Inductance — 6.5 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3500 700 110 — — — V V/°C Ω V S( ) Ω Parameter µA nA nC ns Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25°C, I D = 1.0 mA VGS = 10V, ID = 17A ➃ VGS = 10V, I D = 27.4A VDS = VGS, ID = 250µA VDS > 15V, I DS = 17A ➃ VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V, I D = 27.4A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 100V, ID = 27.4A, RG = 2.35Ω, VGS = 10V see figure 10 nH pF Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = 25V f = 1.0 MHz see figure 5 Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — 27.4 110 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 27.4A, VGS = 0V ➃ Tj = 25°C, IF = 27.4A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. — — — — — — 1.9 950 9.0 V ns µC Thermal Resistance Parameter Min. Typ. Max. Units RthJC Junction-to-Case — — 0.83 RthJ-PCB Junction-to-PC Board — TBD — To Order K/W Test Conditions Soldered to a copper clad PC board Previous Datasheet Index Next Data Sheet IRFN250 Device Fig. 2 — Typical Output Characteristics TC = 150°C Fig. 1 — Typical Output Characteristics TC = 25°C ID = 27.4A Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs.Temperature ID = 27.4A Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet IRFN250 Device 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10us 100us 10 1 1ms 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 8 — Maximum Safe Operating Area Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10b — Switching Time Waveforms Fig. 10a — Switching Time Test Circuit To Order Previous Datasheet Index Next Data Sheet IRFN250 Device 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t1 / t2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet IRFN250 Device ➀ Repetitive Rating; Pulse width limited by ➁ ➂ ➃ ➄ maximum junction temperature. (see figure 11) @ VDD = 50V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 27.4A, VGS = 10V, 25 ≤ RG ≤ 200Ω ISD ≤ 27.4A, di/dt ≤ 190A/µs, VDD ≤ BV DSS, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions — SMD-1 All dimensions in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96 To Order