IPB070N06N G OptiMOS® Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS(on),max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPB070N06N G Type IPP070N06N G Package Marking IPB066N06N G Package P-TO263-3-2 P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N G Marking 070N06N P-TO220-3-1 070N06N 066N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 80 T C=100 °C 80 Pulsed drain current I D,pulse T C=25 °C2) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 530 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 250 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 127 A. 2) See figure 3 Rev. 1.01 Unit page 1 2006-06-19 IPB070N06N G Parameter IPP070N06N G Values Symbol Conditions Unit min. typ. max. - - 0.6 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=180 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A, - 5.9 7 mΩ V GS=10 V, I D=80 A, SMD version - 5.6 6.7 - 1.5 - Ω 49 98 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-06-19 IPB070N06N G Parameter IPP070N06N G Values Symbol Conditions Unit min. typ. max. - 3100 4100 - 860 1100 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 210 315 Turn-on delay time t d(on) - 16 24 Rise time tr - 37 56 Turn-off delay time t d(off) - 61 91 Fall time tf - 36 54 Gate to source charge Q gs - 16 21 Gate charge at threshold Q g(th) - 9 12 Gate to drain charge Q gd - 39 59 Switching charge Q sw - 46 68 Gate charge total Qg - 89 118 Gate plateau voltage V plateau - 5.3 - Output charge Q oss 40 54 - - 80 - - 320 - 0.95 1.3 V - 55 70 ns - 96 120 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=3.3 Ω pF ns Gate Charge Characteristics4) V DD=30 V, I D=80 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-06-19 IPB070N06N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 300 IPP070N06N G 90 80 250 70 60 I D [A] P tot [W] 200 150 100 50 40 30 20 50 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs limited by on-state resistance 10 µs 100 µs 102 0.5 1 ms Z thJC [K/W] DC I D [A] 10 ms 1 10 0.2 -1 10 0.1 0.05 0.02 100 0.01 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.01 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-06-19 IPB070N06N G IPP070N06N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 240 28 10 V 220 7V 26 200 6.5 V 160 20 R DS(on) [mΩ] 22 140 I D [A] 24 180 6V 120 100 18 5.5 V 16 14 6V 12 10 5.5 V 80 5V 6.5 V 8 60 7V 6 40 5V 10 V 4 20 2 0 0 0 1 2 3 4 0 5 20 40 V DS [V] 60 80 100 120 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 100 120 80 100 60 g fs [S] I D [A] 80 60 40 40 20 20 0 0 0 1 2 175 °C Rev. 1.01 3 4 5 6 7 V25GS°C[V] 0 20 40 60 80 I D [A] page 5 2006-06-19 IPB070N06N G IPP070N06N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 1800 µA 15 3 V GS(th) [V] R DS(on) [mΩ] 180µA 2.5 10 98 % 2 1.5 typ 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 175°C 98% 25 °C 2 10 I F [A] C [pF] Ciss 103 Coss 175 °C 25°C 98% 101 100 Crss 102 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.01 0 0.5 1 1.5 2 2.5 V SD [V] page 6 2006-06-19 IPB070N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 102 IPP070N06N G 12 25 °C 100 °C 30 V 10 12 V 150 °C 48 V V GS [V] I AV [A] 8 101 6 4 2 100 0 100 101 102 103 0 20 t AV [µs] 40 60 80 100 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.01 page 7 2006-06-19 IPB070N06N G IPP070N06N G PG-TO-263 (D²-Pak) Rev. 1.01 page 8 2006-06-19 IPB070N06N G IPP070N06N G PG-TO220-3: Outline Rev. 1.01 page 9 2006-06-19 IPB070N06N G IPP070N06N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 2006-06-19