BBY52... Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless single LS (nH) Marking 0.4 K 0.6 KK * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit Oct-24-2002 BBY52... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 6 V - - 10 VR = 6 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 1.4 1.85 2.2 VR = 2 V, f = 1 MHz 0.95 1.5 2 VR = 3 V, f = 1 MHz 0.9 1.35 1.75 VR = 4 V, f = 1 MHz 0.85 1.15 1.45 1.1 1.6 2.1 - 0.9 1.7 Capacitance ratio CT1 /CT4 VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rS VR = 1 V, f = 1 GHz 2 Oct-24-2002 BBY52... Diode capacitance CT = (VR ) Reverse current IR = (VR) TA = 25°C f = 1MHz 45 2.6 pF pA 2.4 2.3 35 2.2 30 IR CT 2.1 2 25 1.9 1.8 20 1.7 1.6 15 1.5 1.4 10 1.3 1.2 5 1.1 1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 0 0 4 VR 1 2 3 4 5 V 7 VR 3 Oct-24-2002