Preliminary Data BSO 220N SIPMOS Small-Signal-Transistor Product Summary Features 20 V RDS(on) 0.13 Ω ID 3.2 A • Dual N Channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Type Package Ordering Code BSO220N SO 8 Q67000-S4010 Maximum Ratings, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current, one channel active ID 3.2 IDpulse 12.8 Value Unit A T A = 25 ˚C Pulsed drain current, one channel active T A = 25 ˚C Avalanche energy, single pulse EAS 15 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 3.2 A EAR 0.2 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W ˚C I D = 3.2 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 3.2 A, V DS = 24 V, di/dt = 200 A/µs T A = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSO 220N Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 45 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 100 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DSS 20 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 10 µA Zero gate voltage drain current µA IDSS VDS = 20 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 20 V, V GS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 2.6 A - 0.13 0.2 VGS = 10 V, I D = 3.2 A - 0.08 0.13 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 220N Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs 1.9 3.8 - S Ciss - 130 165 pF Coss - 80 100 Crss - 40 50 td(on) - 15 23 ns tr - 33 50 ns td(off) - 14 21 ns tf - 15 23 ns Characteristics Transconductance VDS≤2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Ω Rise time VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Ω Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Ω Fall time VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Ω Data Sheet 3 05.99 BSO 220N Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. QG(th) - 0.6 0.9 Qg(5) - 9.2 13.8 Qg - 14.5 22 V(plateau) - 3.13 - V IS - - 3.2 A I SM - - 12.8 VSD - 0.95 1.4 V t rr - 37 55 ns Q rr - 19 30 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 15 V, ID≥0,1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 15 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total nC VDD = 15 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage VDD = 15 V, ID = 2.6 A Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 220N Power dissipation Drain current Ptot= f (TA) ID = f (TA ) BSO220N BSO220N 2.4 3.6 W A 2.0 2.8 2.4 1.6 ID Ptot 1.8 1.4 2.0 1.2 1.6 1.0 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 0.0 0 160 20 40 60 80 100 120 ˚C TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 ˚C parameter : D= tp/T 10 160 2 BSO220N 10 2 BSO220N A K/W /ID tp = 21.0µs S 10 1 = 100 µs n) RD Z thJA o S( VD ID 1 ms 10 1 10 ms 10 0 D = 0.50 0.20 10 0 0.10 single pulse 10 -1 DC 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Data Sheet s 10 4 tp 5 05.99 BSO 220N Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 2.6 A, VGS = 4.5 V BSO220N 8.0 BSO220N 0.40 Ptot = 2W Ω li kj hg f e VGS [V] a 2.5 ID 6.0 5.0 b 3.0 c 3.5 d 4.0 e 4.5 d f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 4.0 3.0 c 2.0 k 8.0 l 10.0 0.32 RDS(on) A 0.28 0.24 98% 0.20 0.16 typ 0.12 0.08 1.0 b 0.04 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 -60 5.0 VDS -20 20 60 100 ˚C 180 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 C pF Crss 10 2 Coss Ciss 10 1 0 5 10 15 V 25 VDS Data Sheet 6 05.99 BSO 220N Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 10 µA 6.0 3.2 A V 5.0 2.4 VGS(th) 4.5 ID 4.0 3.5 3.0 2.0 1.6 2.5 1.2 max 0.8 typ 0.4 min 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 -60 5.0 VGS -20 20 60 100 V 160 Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO220N A IF 10 1 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 220N Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 3.2 A, VDD = 25 V RGS = 25 Ω VGS = f (Q Gate) parameter: ID puls = 2.6 A BSO220N 20 16 mJ V 16 12 VGS EAS 14 12 10 10 8 8 0,2 VDS max 6 0,8 VDS max 6 4 4 2 2 0 20 40 60 80 100 ˚C 120 Drain-source breakdown voltage 0 0 160 Tj 2 4 6 8 10 12 14 16 18nC 21 Q Gate V(BR)DSS = f (Tj) BSO220N 24.5 V V(BR)DSS 23.5 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99