Silicon RF Switching Diode ● BA 582 For low-loss VHF band switching in TV/VTR tuners Type Marking Ordering Code Pin Configuration Package1) BA 582 blue S Q62702-A829 SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current, TA ≤ 60 ˚C IF 100 mA Operation temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient 1) 600 K/W For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BA 582 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Forward voltage IF = 100 mA VF – – 1 V Reverse current VR = 20 V IR – – 20 nA Diode capacitance f = 1 MHz VR = 1 V VR = 3 V CT Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA rf Reverse resistance VR = 1 V, f = 100 MHz Series inductance pF – 0.6 1.4 1.1 Ω – – 0.45 0.38 0.7 0.5 1/gp – 100 – kΩ LS – 2.8 – nH Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 0.92 0.85 Forward resistance rf = f (IF) f = 100 MHz 2